The contribution of grain boundary scattering versus surface scattering to the resistivity of thin polycrystalline films

TY - JOUR

T1 - The contribution of grain boundary scattering versus surface scattering to the resistivity of thin polycrystalline films

AU - Marom, H.

AU - Ritterband, M.

AU - Eizenberg, M.

N1 - Funding Information: This work was supported by the “Magnet” program of the Chief Scientist Office at the Israeli Ministry of Industry and Trade, Consortium of Emerging Dielectric, and Conductor Technologies for the Semiconductor Industry. H. Marom acknowledges the support of the Israel Ministry of Science Eshkol grant.

PY - 2006/7/3

Y1 - 2006/7/3

N2 - Materials with nanometric dimensions exhibit higher electrical resistivity due to additional scattering centers for the conduction electrons, mainly from surfaces and grain boundaries. In this study we focus on the effect of grain boundaries by modeling the expected resistivity due to the observed log-normal distribution of boundaries, unlike the widely used model of Mayadas and Shatzkes that assumes a Gaussian distribution. The results of the model are then experimentally explored by correlating the resistivity of thin copper films with their grain size distribution. Applying a newly suggested analysis method solves the ambiguity in distinction between surface scattering and grain boundaries scattering. It is found that for the explored layers the increase in resistivity is dominated by the effect of grain boundaries.

AB - Materials with nanometric dimensions exhibit higher electrical resistivity due to additional scattering centers for the conduction electrons, mainly from surfaces and grain boundaries. In this study we focus on the effect of grain boundaries by modeling the expected resistivity due to the observed log-normal distribution of boundaries, unlike the widely used model of Mayadas and Shatzkes that assumes a Gaussian distribution. The results of the model are then experimentally explored by correlating the resistivity of thin copper films with their grain size distribution. Applying a newly suggested analysis method solves the ambiguity in distinction between surface scattering and grain boundaries scattering. It is found that for the explored layers the increase in resistivity is dominated by the effect of grain boundaries.

KW - Conductivity

KW - Copper

KW - Electron scattering

KW - Grain boundary

KW - Resistivity

KW - Scanning electron microscopy

KW - Sputtering

KW - Surface conductivity

UR - http://www.scopus.com/inward/record.url?scp=33646420091&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.12.155

DO - 10.1016/j.tsf.2005.12.155

M3 - 文章

AN - SCOPUS:33646420091

SN - 0040-6090

VL - 510

SP - 62

EP - 67

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -