TEM and XPS studies on CdS/CIGS interfaces

TY - JOUR

T1 - TEM and XPS studies on CdS/CIGS interfaces

AU - Han, Jun Feng

AU - Liao, Cheng

AU - Cha, Li Mei

AU - Jiang, Tao

AU - Xie, Hua Mu

AU - Zhao, Kui

AU - Besland, Marie Paule

N1 - Funding Information: The first author acknowledges National Natural Science Foundation of China ( 51202227 ). HRTEM and XPS analyses of CdS/CIGS interface were performed at the CNRS-IMN institute (Nantes-France).

PY - 2014/12

Y1 - 2014/12

N2 - Copper indium gallium selenide (CIGS) was deposited by metallic precursors sputtering and subsequently submitted to a selenization process. The upper CdS layers were deposited by chemical bath deposition (CBD) technique. The CdS/CIGS interfaces were investigated by Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). As checked by XPS analysis, the CIGS surface exhibited a hydroxide-terminated CdSe layer when treated with Cd Partial Electrolyte solution (Cd PE). Its thickness was roughly estimated to several nanometers. A 100 nm thick CdS layer was deposited onto CIGS surface. The TEM images revealed a clear and sharp interface between CdS and CIGS. XPS analysis showed a CIGS surface covered by a pinhole free and homogeneous CdS layer. XPS depth profile measurement of the CdS/CIGS interface did not evidence elemental inter-diffusion between the CIGS and CdS layers, in very good agreement with TEM observations.

AB - Copper indium gallium selenide (CIGS) was deposited by metallic precursors sputtering and subsequently submitted to a selenization process. The upper CdS layers were deposited by chemical bath deposition (CBD) technique. The CdS/CIGS interfaces were investigated by Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). As checked by XPS analysis, the CIGS surface exhibited a hydroxide-terminated CdSe layer when treated with Cd Partial Electrolyte solution (Cd PE). Its thickness was roughly estimated to several nanometers. A 100 nm thick CdS layer was deposited onto CIGS surface. The TEM images revealed a clear and sharp interface between CdS and CIGS. XPS analysis showed a CIGS surface covered by a pinhole free and homogeneous CdS layer. XPS depth profile measurement of the CdS/CIGS interface did not evidence elemental inter-diffusion between the CIGS and CdS layers, in very good agreement with TEM observations.

KW - A. Chalcogenides

KW - A. Interfaces

KW - A. Thin films

KW - C. Electron microscopy

KW - C. Photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=84905663481&partnerID=8YFLogxK

U2 - 10.1016/j.jpcs.2014.06.002

DO - 10.1016/j.jpcs.2014.06.002

M3 - 文章

AN - SCOPUS:84905663481

SN - 0022-3697

VL - 75

SP - 1279

EP - 1283

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 12

ER -