TEM and XPS studies on CdS/CIGS interfaces

Jun Feng Han*, Cheng Liao, Li Mei Cha, Tao Jiang, Hua Mu Xie, Kui Zhao, Marie Paule Besland

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

Copper indium gallium selenide (CIGS) was deposited by metallic precursors sputtering and subsequently submitted to a selenization process. The upper CdS layers were deposited by chemical bath deposition (CBD) technique. The CdS/CIGS interfaces were investigated by Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). As checked by XPS analysis, the CIGS surface exhibited a hydroxide-terminated CdSe layer when treated with Cd Partial Electrolyte solution (Cd PE). Its thickness was roughly estimated to several nanometers. A 100 nm thick CdS layer was deposited onto CIGS surface. The TEM images revealed a clear and sharp interface between CdS and CIGS. XPS analysis showed a CIGS surface covered by a pinhole free and homogeneous CdS layer. XPS depth profile measurement of the CdS/CIGS interface did not evidence elemental inter-diffusion between the CIGS and CdS layers, in very good agreement with TEM observations.

Original languageEnglish
Pages (from-to)1279-1283
Number of pages5
JournalJournal of Physics and Chemistry of Solids
Volume75
Issue number12
DOIs
StatePublished - Dec 2014
Externally publishedYes

Keywords

  • A. Chalcogenides
  • A. Interfaces
  • A. Thin films
  • C. Electron microscopy
  • C. Photoelectron spectroscopy

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