Surface evolution of sputtered Cu(In,Ga)Se2 thin films under various annealing temperatures

Jun feng Han*, Liang qi Ouyang, Da ming Zhuang, Ming Zhao, Cheng Liao, Jiang Liu, Limei Cha, M. P. Besland

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


In this work, copper indium gallium selenide (CIGS) thin films were prepared by sputtering CIGS quaternary target and subsequent annealing under Se atmosphere in the 240–550 °C range. X-ray diffraction (XRD), Grazing incidence x-ray diffraction (GIXRD), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were performed to investigate the crystalline structures and chemical compositions of the CIGS thin films. According to XRD, GIXRD and Raman analyses, the CIGS phase was splitted into CuSe phase and In4Se3 phase at the very surface when CIGS was annealed at 240 and 270 °C. In addition, XRD patterns indicated a grain size growth with increasing temperature. XPS analyses contributed more information on the film surface chemistry. Indeed, O 1 s and Na 1 s signals were observed at the film surface above 380 °C, and were even increased from 450 to 550 °C. Simultaneously, the surface appeared to exhibit a Cu and Ga poor surface chemical composition. The strong correlation between O, Na and Cu atomic contents in the CIGS surface were discussed in the paper.

Original languageEnglish
Pages (from-to)4840-4847
Number of pages8
JournalJournal of Materials Science: Materials in Electronics
Issue number7
StatePublished - 24 Jul 2015
Externally publishedYes


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