Superconducting films of MgB2 via ion beam mixing of Mg/B multilayers

J. L. Beckham; L. B. Bayu Aji; A. A. Baker; J. H. Bae; E. Stavrou; R. E. Jacob; S. K. McCall; S. O. Kucheyev

doi:10.1088/1361-6463/ab7624

Superconducting films of MgB₂ via ion beam mixing of Mg/B multilayers

J. L. Beckham, L. B. Bayu Aji, A. A. Baker, J. H. Bae, E. Stavrou, R. E. Jacob, S. K. McCall, S. O. Kucheyev^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The growth of smooth superconducting MgB₂ films in a non-epitaxial regime is challenging. Here, we study the formation of superconducting MgB₂ films by solid-phase reactive inter-diffusion of sputter-deposited Mg/B multilayers, employing ion beam mixing to disperse the multilayers prior to thermal annealing. The multilayers are intermixed by room-Temperature bombardment with 500 keV Xe ions to doses up to 4 × 10¹⁶ cm^-2, followed by thermal annealing to form MgB₂. Results show that such an intermixing step leads to a dramatic reduction in surface roughness of superconducting films. However, lattice defects produced by ion bombardment reduce the critical superconducting transition temperature, an effect which scales monotonically with ion dose. The critical temperature can be recovered by an additional defect annealing step at.

Original language	English
Article number	205302
Journal	Journal Physics D: Applied Physics
Volume	53
Issue number	20
DOIs	https://doi.org/10.1088/1361-6463/ab7624
State	Published - 13 May 2020
Externally published	Yes

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title = "Superconducting films of MgB2 via ion beam mixing of Mg/B multilayers",

abstract = "The growth of smooth superconducting MgB2 films in a non-epitaxial regime is challenging. Here, we study the formation of superconducting MgB2 films by solid-phase reactive inter-diffusion of sputter-deposited Mg/B multilayers, employing ion beam mixing to disperse the multilayers prior to thermal annealing. The multilayers are intermixed by room-Temperature bombardment with 500 keV Xe ions to doses up to 4 × 1016 cm-2, followed by thermal annealing to form MgB2. Results show that such an intermixing step leads to a dramatic reduction in surface roughness of superconducting films. However, lattice defects produced by ion bombardment reduce the critical superconducting transition temperature, an effect which scales monotonically with ion dose. The critical temperature can be recovered by an additional defect annealing step at.",

author = "Beckham, {J. L.} and {Bayu Aji}, {L. B.} and Baker, {A. A.} and Bae, {J. H.} and E. Stavrou and Jacob, {R. E.} and McCall, {S. K.} and Kucheyev, {S. O.}",

note = "Publisher Copyright: {\textcopyright} 2020 IOP Publishing Ltd.",

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doi = "10.1088/1361-6463/ab7624",

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AU - Beckham, J. L.

AU - Bayu Aji, L. B.

AU - Baker, A. A.

AU - Bae, J. H.

AU - Stavrou, E.

AU - Jacob, R. E.

AU - McCall, S. K.

AU - Kucheyev, S. O.

PY - 2020/5/13

Y1 - 2020/5/13

N2 - The growth of smooth superconducting MgB2 films in a non-epitaxial regime is challenging. Here, we study the formation of superconducting MgB2 films by solid-phase reactive inter-diffusion of sputter-deposited Mg/B multilayers, employing ion beam mixing to disperse the multilayers prior to thermal annealing. The multilayers are intermixed by room-Temperature bombardment with 500 keV Xe ions to doses up to 4 × 1016 cm-2, followed by thermal annealing to form MgB2. Results show that such an intermixing step leads to a dramatic reduction in surface roughness of superconducting films. However, lattice defects produced by ion bombardment reduce the critical superconducting transition temperature, an effect which scales monotonically with ion dose. The critical temperature can be recovered by an additional defect annealing step at.

AB - The growth of smooth superconducting MgB2 films in a non-epitaxial regime is challenging. Here, we study the formation of superconducting MgB2 films by solid-phase reactive inter-diffusion of sputter-deposited Mg/B multilayers, employing ion beam mixing to disperse the multilayers prior to thermal annealing. The multilayers are intermixed by room-Temperature bombardment with 500 keV Xe ions to doses up to 4 × 1016 cm-2, followed by thermal annealing to form MgB2. Results show that such an intermixing step leads to a dramatic reduction in surface roughness of superconducting films. However, lattice defects produced by ion bombardment reduce the critical superconducting transition temperature, an effect which scales monotonically with ion dose. The critical temperature can be recovered by an additional defect annealing step at.

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Superconducting films of MgB₂ via ion beam mixing of Mg/B multilayers

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