Structural changes in amorphous chalcogenide semiconductors under high pressure: A Raman study

Y. C. Boulmetis, E. Stavrou, C. Raptis*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The Raman spectra of binary As-S and ternary Ge-As-S semiconducting chalcogenide glasses have been studied under variable hydrostatic pressure up to 7.0 GPa. Two As-S glasses were investigated, the first at the stoichiometric composition As2S3 (with critical mean coordination number value Z = 2.4) and the other S-rich, non-stoichiometric one belonging to the floppy network regime (AsS4, Z = 2.2), while the ternary Ge-As-S glass was on the rigid network side (Ge25As10S65, Z = 2.6). Reversible pressure-induced effects have been observed in the floppy AsS4 glass manifested by the amorphization of its crystalline sulphur domains. In contrast, the pressure-induced appearance of homopolar Ge-Ge bonds and the formation of "ethanol-like" S3Ge-GeS3 units in the rigid ternary Ge25As10S65 glass are irreversible, after pressure relief.

Original languageEnglish
Pages (from-to)256-260
Number of pages5
JournalPhysica Status Solidi (B): Basic Research
Volume244
Issue number1
DOIs
StatePublished - Jan 2007
Externally publishedYes

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