Structural changes in amorphous chalcogenide semiconductors under high pressure: A Raman study

Y. C. Boulmetis; E. Stavrou; C. Raptis

doi:10.1002/pssb.200672553

Structural changes in amorphous chalcogenide semiconductors under high pressure: A Raman study

Y. C. Boulmetis, E. Stavrou, C. Raptis^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The Raman spectra of binary As-S and ternary Ge-As-S semiconducting chalcogenide glasses have been studied under variable hydrostatic pressure up to 7.0 GPa. Two As-S glasses were investigated, the first at the stoichiometric composition As2S3 (with critical mean coordination number value Z = 2.4) and the other S-rich, non-stoichiometric one belonging to the floppy network regime (AsS₄, Z = 2.2), while the ternary Ge-As-S glass was on the rigid network side (Ge₂₅As₁₀S₆₅, Z = 2.6). Reversible pressure-induced effects have been observed in the floppy AsS₄ glass manifested by the amorphization of its crystalline sulphur domains. In contrast, the pressure-induced appearance of homopolar Ge-Ge bonds and the formation of "ethanol-like" S₃Ge-GeS₃ units in the rigid ternary Ge₂₅As₁₀S₆₅ glass are irreversible, after pressure relief.

Original language	English
Pages (from-to)	256-260
Number of pages	5
Journal	Physica Status Solidi (B): Basic Research
Volume	244
Issue number	1
DOIs	https://doi.org/10.1002/pssb.200672553
State	Published - Jan 2007
Externally published	Yes

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title = "Structural changes in amorphous chalcogenide semiconductors under high pressure: A Raman study",

abstract = "The Raman spectra of binary As-S and ternary Ge-As-S semiconducting chalcogenide glasses have been studied under variable hydrostatic pressure up to 7.0 GPa. Two As-S glasses were investigated, the first at the stoichiometric composition As2S3 (with critical mean coordination number value Z = 2.4) and the other S-rich, non-stoichiometric one belonging to the floppy network regime (AsS4, Z = 2.2), while the ternary Ge-As-S glass was on the rigid network side (Ge25As10S65, Z = 2.6). Reversible pressure-induced effects have been observed in the floppy AsS4 glass manifested by the amorphization of its crystalline sulphur domains. In contrast, the pressure-induced appearance of homopolar Ge-Ge bonds and the formation of {"}ethanol-like{"} S3Ge-GeS3 units in the rigid ternary Ge25As10S65 glass are irreversible, after pressure relief.",

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AU - Boulmetis, Y. C.

AU - Stavrou, E.

AU - Raptis, C.

PY - 2007/1

Y1 - 2007/1

N2 - The Raman spectra of binary As-S and ternary Ge-As-S semiconducting chalcogenide glasses have been studied under variable hydrostatic pressure up to 7.0 GPa. Two As-S glasses were investigated, the first at the stoichiometric composition As2S3 (with critical mean coordination number value Z = 2.4) and the other S-rich, non-stoichiometric one belonging to the floppy network regime (AsS4, Z = 2.2), while the ternary Ge-As-S glass was on the rigid network side (Ge25As10S65, Z = 2.6). Reversible pressure-induced effects have been observed in the floppy AsS4 glass manifested by the amorphization of its crystalline sulphur domains. In contrast, the pressure-induced appearance of homopolar Ge-Ge bonds and the formation of "ethanol-like" S3Ge-GeS3 units in the rigid ternary Ge25As10S65 glass are irreversible, after pressure relief.

AB - The Raman spectra of binary As-S and ternary Ge-As-S semiconducting chalcogenide glasses have been studied under variable hydrostatic pressure up to 7.0 GPa. Two As-S glasses were investigated, the first at the stoichiometric composition As2S3 (with critical mean coordination number value Z = 2.4) and the other S-rich, non-stoichiometric one belonging to the floppy network regime (AsS4, Z = 2.2), while the ternary Ge-As-S glass was on the rigid network side (Ge25As10S65, Z = 2.6). Reversible pressure-induced effects have been observed in the floppy AsS4 glass manifested by the amorphization of its crystalline sulphur domains. In contrast, the pressure-induced appearance of homopolar Ge-Ge bonds and the formation of "ethanol-like" S3Ge-GeS3 units in the rigid ternary Ge25As10S65 glass are irreversible, after pressure relief.

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Structural changes in amorphous chalcogenide semiconductors under high pressure: A Raman study

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