@inproceedings{670787e7b2ca4eb49409534bfdfadb64,
title = "Strong-field resonant dynamics in semiconductors: Interplay of rabi flopping and intraband motion",
abstract = "We predict that a direct bandgap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations (KARO). In this regime, Rabi oscillations are strongly coupled to intraband motion, and electron populations undergo very rapid changes when electrons pass near the Brillouin zone center. By the end of a laser pulse, these dynamics may form very asymmetric reciprocal-space population distributions, inducing thus a residual electric current controlled by the carrier-envelope phase.",
author = "Wismer, {Michael S.} and Kruchinin, {Stanislav Yu} and Marcelo Ciappina and Stockman, {Mark I.} and Yakovlev, {Vladislav S.}",
note = "Publisher Copyright: {\textcopyright} 2016 OSA. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; null ; Conference date: 05-06-2016 Through 10-06-2016",
year = "2016",
month = dec,
day = "16",
doi = "10.1364/cleo_at.2016.jth2a.24",
language = "英语",
series = "2016 Conference on Lasers and Electro-Optics, CLEO 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 Conference on Lasers and Electro-Optics, CLEO 2016",
address = "United States",
}