Strong-field resonant dynamics in semiconductors: Interplay of rabi flopping and intraband motion

Michael S. Wismer, Stanislav Yu Kruchinin, Marcelo Ciappina, Mark I. Stockman, Vladislav S. Yakovlev

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We predict that a direct bandgap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations (KARO). In this regime, Rabi oscillations are strongly coupled to intraband motion, and electron populations undergo very rapid changes when electrons pass near the Brillouin zone center. By the end of a laser pulse, these dynamics may form very asymmetric reciprocal-space population distributions, inducing thus a residual electric current controlled by the carrier-envelope phase.

Original languageEnglish
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580118
DOIs
StatePublished - 16 Dec 2016
Externally publishedYes
Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
Duration: 5 Jun 201610 Jun 2016

Publication series

Name2016 Conference on Lasers and Electro-Optics, CLEO 2016

Conference

Conference2016 Conference on Lasers and Electro-Optics, CLEO 2016
CountryUnited States
CitySan Jose
Period5/06/1610/06/16

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