Solid state reactions of TaW thin films and Si single crystals

A. Appelbaum*, M. Eizenberg, R. Brener

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Contact reactions between a Si substrate and thin films of TaW bilayers and codeposited alloys have been studied. The interdiffusion and silicide formation have been analysed by Auger electron spectroscopy and X-ray diffraction. In the bilayer structures the formation of TaSi2 and WSi2 is observed at 700-750°C and 800-850°C, respectively. For the Ta-rich alloy of Ta80W20, TaSi2 is formed at 700-750°C similarly to the bilayer case, but this is followed by the formation of Ta5 Si3 which disappears at higher temperatures. For the W-rich alloy of Ta20W80, silicide formation is delayed to higher temperatures due to alloying in the thin film.

Original languageEnglish
Pages (from-to)227-230
Number of pages4
JournalVacuum
Volume33
Issue number4
DOIs
StatePublished - Apr 1983
Externally publishedYes

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