TY - JOUR
T1 - Solid-phase epitaxial regrowth of Sb-implanted Si1-xGe x strained layers
T2 - Kinetics and electrical properties
AU - Atzmon, Z.
AU - Eizenberg, M.
AU - Shacham-Diamand, Y.
AU - Mayer, J. W.
AU - Schäffler, F.
PY - 1994
Y1 - 1994
N2 - Kinetics and electrical properties of solid-phase epitaxial regrown (SPEG) layers of Sb-implanted strained Si1-xGex alloys are reported. Two sets of Si1-xGex epilayers with compositions of x=0.08 and 0.18, molecular beam epitaxy grown on Si(100) substrates, were implanted at room temperature with Sb+ ions at an energy of 200 and 100 keV, respectively, and doses of 1014 and 1015 ions/cm2. A set of Si(100) samples was also implanted as a reference. The samples were annealed at temperatures of 525, 550, and 575°C for durations between 5 s and 10 min. For the higher-dose Sb-implanted Si 0.92Ge0.08 layer (1015 cm-2) ion backscattering measurements in the channeling mode show a decrease in the regrowth rate compared to Sb-implanted Si(100). The activation energy of the SPEG process for the Si0.92Ge0.08 alloy was 2.9±0.2 eV, higher than the value of 2.4±0.2 eV obtained for pure Si. For the alloy with 18% Ge the SPEG rate for the 1015 cm-2 dose was much smaller compared to the sample with 8% Ge. For the lower-dose implantation (1014 cm-2) the regrowth rates for Si 0.92Ge0.08 and pure Si were very close, and the activation energies were 2.8±0.2 and 2.7±0.2, respectively. It was also found that the SPEG rate in a rapid thermal annealing was significantly higher than that for a sample heated in a conventional furnace.
AB - Kinetics and electrical properties of solid-phase epitaxial regrown (SPEG) layers of Sb-implanted strained Si1-xGex alloys are reported. Two sets of Si1-xGex epilayers with compositions of x=0.08 and 0.18, molecular beam epitaxy grown on Si(100) substrates, were implanted at room temperature with Sb+ ions at an energy of 200 and 100 keV, respectively, and doses of 1014 and 1015 ions/cm2. A set of Si(100) samples was also implanted as a reference. The samples were annealed at temperatures of 525, 550, and 575°C for durations between 5 s and 10 min. For the higher-dose Sb-implanted Si 0.92Ge0.08 layer (1015 cm-2) ion backscattering measurements in the channeling mode show a decrease in the regrowth rate compared to Sb-implanted Si(100). The activation energy of the SPEG process for the Si0.92Ge0.08 alloy was 2.9±0.2 eV, higher than the value of 2.4±0.2 eV obtained for pure Si. For the alloy with 18% Ge the SPEG rate for the 1015 cm-2 dose was much smaller compared to the sample with 8% Ge. For the lower-dose implantation (1014 cm-2) the regrowth rates for Si 0.92Ge0.08 and pure Si were very close, and the activation energies were 2.8±0.2 and 2.7±0.2, respectively. It was also found that the SPEG rate in a rapid thermal annealing was significantly higher than that for a sample heated in a conventional furnace.
UR - http://www.scopus.com/inward/record.url?scp=0345977849&partnerID=8YFLogxK
U2 - 10.1063/1.356013
DO - 10.1063/1.356013
M3 - 文章
AN - SCOPUS:0345977849
SN - 0021-8979
VL - 75
SP - 3936
EP - 3943
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 8
ER -