Si 3N 4 works as a good dielectric on InGaAs by the process optimization. 30 min anneal at 400°C results in D it ∼ 10 12 eV -1cm -2. No influences of ambient gas treatment conditions or treatment order relative to gate metal deposition on C-V behavior and Dit values were observed. Influence of the annealing temperature on C-V behavior and Dit was explored in the range 300°C - 500°C. It was found that 400°C anneal shows the best C-V behavior and the lowest Dit values for the Si3N4 (PECVD)/InGaAs system. Slightly better results of the accumulation frequency dispersion and flatband hysteresis were observed for forming gas treatment compared to N 2/vacuum anneals.
|Title of host publication||Physics and Technology of High-k Materials 9|
|Number of pages||9|
|State||Published - 2011|
|Event||9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States|
Duration: 10 Oct 2011 → 12 Oct 2011
|Conference||9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting|
|Period||10/10/11 → 12/10/11|