@inproceedings{7f5d43b8ecb5404092b11f5db9ee940c,
title = "Si3N4 as a useful dielectric for InGaAs MIS stacks",
abstract = "Si3N4 works as a good dielectric on InGaAs by the process optimization. 30 min anneal at 400°C results in Dit ∼ 1012 eV-1cm-2. No influences of ambient gas treatment conditions or treatment order relative to gate metal deposition on C-V behavior and Dit values were observed. Influence of the annealing temperature on C-V behavior and Dit was explored in the range 300°C - 500°C. It was found that 400°C anneal shows the best C-V behavior and the lowest Dit values for the Si3N4 (PECVD)/InGaAs system. Slightly better results of the accumulation frequency dispersion and flatband hysteresis were observed for forming gas treatment compared to N2/vacuum anneals.",
author = "I. Krylov and A. Gavrilov and S. Cohen and D. Ritter and M. Eizenberg",
year = "2011",
doi = "10.1149/1.3633042",
language = "英语",
isbn = "9781566779036",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "255--263",
booktitle = "Physics and Technology of High-k Materials 9",
edition = "3",
note = "9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting ; Conference date: 10-10-2011 Through 12-10-2011",
}