Si 3N 4 as a useful dielectric for InGaAs MIS stacks

I. Krylov*, A. Gavrilov, S. Cohen, D. Ritter, M. Eizenberg

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Si 3N 4 works as a good dielectric on InGaAs by the process optimization. 30 min anneal at 400°C results in D it ∼ 10 12 eV -1cm -2. No influences of ambient gas treatment conditions or treatment order relative to gate metal deposition on C-V behavior and Dit values were observed. Influence of the annealing temperature on C-V behavior and Dit was explored in the range 300°C - 500°C. It was found that 400°C anneal shows the best C-V behavior and the lowest Dit values for the Si3N4 (PECVD)/InGaAs system. Slightly better results of the accumulation frequency dispersion and flatband hysteresis were observed for forming gas treatment compared to N 2/vacuum anneals.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 9
Pages255-263
Number of pages9
Edition3
DOIs
StatePublished - 2011
Externally publishedYes
Event9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States
Duration: 10 Oct 201112 Oct 2011

Publication series

NameECS Transactions
Number3
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/10/1112/10/11

Fingerprint Dive into the research topics of 'Si <sub>3</sub>N <sub>4</sub> as a useful dielectric for InGaAs MIS stacks'. Together they form a unique fingerprint.

Cite this