Short-circuiting in fullerene devices studied by in situ electrical measurement in high vacuum and infrared imaging analysis

H. R. Wu, M. L. Wang, Q. L. Song, Y. Wu, Z. T. Xie, X. D. Gao, X. M. Ding, X. Y. Hou*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In the present work, current-voltage (I-V) characteristics of fullerene devices (ITO{minus 45 degree rule}C60{minus 45 degree rule}Al) are reexamined by in situ electrical measurement in high vacuum and by infrared imaging analysis. Two kinds of I-V curves are detected: 'ohmic' and nonohmic. Degradation processes of the two different devices are measured, and 'ohmic' degradation processes are ascribed to short-circuiting. ITO{minus 45 degree rule}C60{minus 45 degree rule}Al devices in high vacuum are confirmed to be intrinsically nonohmic. Surface temperature distribution of the two different devices is measured and localized heat is detected further confirming the existence of short-circuiting in 'ohmic' devices. To avoid short-circuit, organic buffers are inserted between fullerene layer and cathode and this is found to be effective.

Original languageEnglish
Pages (from-to)231-235
Number of pages5
JournalCurrent Applied Physics
Volume7
Issue number3
DOIs
StatePublished - Mar 2007
Externally publishedYes

Keywords

  • Fullerene
  • In situ high vacuum measurement
  • Infrascope image
  • Short-circuiting

Fingerprint Dive into the research topics of 'Short-circuiting in fullerene devices studied by in situ electrical measurement in high vacuum and infrared imaging analysis'. Together they form a unique fingerprint.

Cite this