Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films

M. Eizenberg; H. Föll; K. N. Tu

doi:10.1063/1.91981

Shallow silicide contacts formed by using codeposited Pt₂Si and Pt_1.2Si films

M. Eizenberg^*, H. Föll, K. N. Tu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We have succeeded in making shallow silicide contacts on Si by using codeposited Pt₂Si and Pt_1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.

Original language	English
Pages (from-to)	547-549
Number of pages	3
Journal	Applied Physics Letters
Volume	37
Issue number	6
DOIs	https://doi.org/10.1063/1.91981
State	Published - 1980
Externally published	Yes

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title = "Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films",

abstract = "We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.",

author = "M. Eizenberg and H. F{\"o}ll and Tu, {K. N.}",

year = "1980",

doi = "10.1063/1.91981",

language = "英语",

volume = "37",

pages = "547--549",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films

AU - Eizenberg, M.

AU - Föll, H.

AU - Tu, K. N.

PY - 1980

Y1 - 1980

N2 - We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.

AB - We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.

UR - http://www.scopus.com/inward/record.url?scp=0042521276&partnerID=8YFLogxK

U2 - 10.1063/1.91981

DO - 10.1063/1.91981

M3 - 文章

AN - SCOPUS:0042521276

SN - 0003-6951

VL - 37

SP - 547

EP - 549

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Shallow silicide contacts formed by using codeposited Pt₂Si and Pt_1.2Si films

Abstract

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