Room-Temperature Synthesized Amorphous P-Type Transparent Ga2O3-Cu2S Alloy Thin Films with Tunable Optoelectronic Properties

Xiao Hu Lv; Zhan Hua Li; Yuan Shen Qi; Tooru Tanaka; Qi Xin Guo; Kin Man Yu; Chao Ping Liu

doi:10.1016/j.apsusc.2023.156341

Room-Temperature Synthesized Amorphous P-Type Transparent Ga2O3-Cu2S Alloy Thin Films with Tunable Optoelectronic Properties

Xiao Hu Lv, Zhan Hua Li, Yuan Shen Qi, Tooru Tanaka, Qi Xin Guo, Kin Man Yu, Chao Ping Liu^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Ultra-wide bandgap Ga2O3 has many intriguing properties which make them potentially suitable for optoelectronic applications. However, its functionalities are largely hindered by the lack of p-type Ga2O3 based materials. In this work, we synthesized amorphous p-type transparent (Ga2O3)1−x(Cu2S)x alloy thin films with x 0.2 to ∼5.5 eV below the vacuum level, making the formation of native shallow acceptors more energetically favorable and hence enhancing their p-type conductivity. Our results show that electrical and optical properties of these amorphous p-type transparent (Ga2O3)1−x(Cu2S)x alloy thin films are potentially important in bipolar devices applications, e.g., Ga2O3 based p-n heterojunction power devices and high efficiency solar cells.

Original language	English
Journal	Applied Surface Science
Volume	615
DOIs	https://doi.org/10.1016/j.apsusc.2023.156341
State	Published - 1 Apr 2023

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title = "Room-Temperature Synthesized Amorphous P-Type Transparent Ga2O3-Cu2S Alloy Thin Films with Tunable Optoelectronic Properties",

abstract = "Ultra-wide bandgap Ga2O3 has many intriguing properties which make them potentially suitable for optoelectronic applications. However, its functionalities are largely hindered by the lack of p-type Ga2O3 based materials. In this work, we synthesized amorphous p-type transparent (Ga2O3)1−x(Cu2S)x alloy thin films with x 0.2 to ∼5.5 eV below the vacuum level, making the formation of native shallow acceptors more energetically favorable and hence enhancing their p-type conductivity. Our results show that electrical and optical properties of these amorphous p-type transparent (Ga2O3)1−x(Cu2S)x alloy thin films are potentially important in bipolar devices applications, e.g., Ga2O3 based p-n heterojunction power devices and high efficiency solar cells.",

author = "Lv, {Xiao Hu} and Li, {Zhan Hua} and Qi, {Yuan Shen} and Tooru Tanaka and Guo, {Qi Xin} and Yu, {Kin Man} and Liu, {Chao Ping}",

year = "2023",

month = apr,

day = "1",

doi = "10.1016/j.apsusc.2023.156341",

language = "英语",

volume = "615",

journal = "Applied Surface Science",

issn = "0169-4332",

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TY - JOUR

T1 - Room-Temperature Synthesized Amorphous P-Type Transparent Ga2O3-Cu2S Alloy Thin Films with Tunable Optoelectronic Properties

AU - Lv, Xiao Hu

AU - Li, Zhan Hua

AU - Qi, Yuan Shen

AU - Tanaka, Tooru

AU - Guo, Qi Xin

AU - Yu, Kin Man

AU - Liu, Chao Ping

PY - 2023/4/1

Y1 - 2023/4/1

N2 - Ultra-wide bandgap Ga2O3 has many intriguing properties which make them potentially suitable for optoelectronic applications. However, its functionalities are largely hindered by the lack of p-type Ga2O3 based materials. In this work, we synthesized amorphous p-type transparent (Ga2O3)1−x(Cu2S)x alloy thin films with x 0.2 to ∼5.5 eV below the vacuum level, making the formation of native shallow acceptors more energetically favorable and hence enhancing their p-type conductivity. Our results show that electrical and optical properties of these amorphous p-type transparent (Ga2O3)1−x(Cu2S)x alloy thin films are potentially important in bipolar devices applications, e.g., Ga2O3 based p-n heterojunction power devices and high efficiency solar cells.

AB - Ultra-wide bandgap Ga2O3 has many intriguing properties which make them potentially suitable for optoelectronic applications. However, its functionalities are largely hindered by the lack of p-type Ga2O3 based materials. In this work, we synthesized amorphous p-type transparent (Ga2O3)1−x(Cu2S)x alloy thin films with x 0.2 to ∼5.5 eV below the vacuum level, making the formation of native shallow acceptors more energetically favorable and hence enhancing their p-type conductivity. Our results show that electrical and optical properties of these amorphous p-type transparent (Ga2O3)1−x(Cu2S)x alloy thin films are potentially important in bipolar devices applications, e.g., Ga2O3 based p-n heterojunction power devices and high efficiency solar cells.

U2 - 10.1016/j.apsusc.2023.156341

DO - 10.1016/j.apsusc.2023.156341

M3 - 文章

SN - 0169-4332

VL - 615

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Room-Temperature Synthesized Amorphous P-Type Transparent Ga2O3-Cu2S Alloy Thin Films with Tunable Optoelectronic Properties

Abstract

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