Role of Transport during Transient Phenomena in AlGaN/GaN Heterostructure FETs

Shlomo Mehari, Yonatan Calahorra, Arkady Gavrilov, Moshe Eizenberg, Dan Ritter

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Transient phenomena in AlGaN/GaN heterostructure field-effect transistors are attributed to trapping and detrapping of electrons from deep localized states, and the measured activation energies are conventionally associated with the electron capture and emission processes. This standard interpretation ignores, however, transport between the two-dimensional electron gas and the trap. Using gated van der Pauw structures, we demonstrate that the transient behavior is determined by transport (at least for the trapping process). The measured activation energy is, therefore, a characteristic of the transport process rather than the emission-capture processes.

Original languageEnglish
Article number7244159
Pages (from-to)1124-1127
Number of pages4
JournalIEEE Electron Device Letters
Volume36
Issue number11
DOIs
StatePublished - 1 Nov 2015
Externally publishedYes

Keywords

  • GaN
  • Hall effect
  • heterostructure field effect transistors (HFETs)
  • transients
  • trapping

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