Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition

Engineering & Materials Science

• Atomic layer deposition 100%
• Titanium nitride 93%
• Electric properties 69%
• Plasmas 60%
• Crystallinity 39%
• Ion bombardment 34%
• Temperature 26%
• Annealing 21%
• Adatoms 20%
• Ligands 14%
• Nitrides 13%
• Desorption 12%

Physics & Astronomy

• titanium nitrides 79%
• atomic layer epitaxy 67%
• low pressure 54%
• electrical properties 47%
• crystallinity 29%
• electrical resistivity 27%
• bombardment 20%
• temperature 19%
• plasma pressure 13%
• annealing 13%
• adatoms 11%
• ligands 10%
• ions 10%
• nitrides 10%
• desorption 9%
• grain size 8%
• coefficients 5%
• energy 3%

Chemical Compounds

• Atomic Layer Epitaxy 75%
• Nitride 63%
• Electrical Property 54%
• Plasma 40%
• Pressure 37%
• Liquid Film 31%
• Ion Bombardment 28%
• Crystallinity 24%
• Annealing 17%
• Adatoms 13%
• Grain Size 10%
• Desorption 8%
• Energy 5%
• Ligand 4%