TY - JOUR
T1 - Regrowth and strain recovery of Sb implanted Si1-xGex strained layers
AU - Atzmon, Z.
AU - Eizenberg, M.
AU - Zolotoyabko, E.
AU - Hong, Stella Q.
AU - Mayer, J. W.
AU - Schäffler, F.
N1 - Funding Information:
The authors wish to acknowledge V. Richter, of the Solid State Institui~, Tuchnion, for the implantation services. The research was supported by Grant no . 88-00314 from the United States-Israel Binational Sci- epee Fouadation (BSF), Jerusalem, Israel. Cornell work was supported, in part, by rational Science Foundation (L.D. Hess). One of us (E.Z.) is indebted to the israel Ministry of Science and ,technology for financial support (Grant no . 040-485).
PY - 1993
Y1 - 1993
N2 - Solid phase epitaxial growth (SPEG) and strain recovery of Sb implanted strained Si1-xGex alloy layers are reported. Three sets of Si1-xGex epilayers with compositions of x = 0.08, 0.10 and 0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at energies of 200 and 100 keV, and doses of 1012, 1013 and 1015 cm-2. These alloys were heat-treated in a rapid thermal annealing system at temperatures between 500 and 1000°C for durations between 5 and 600 s. Ion backscattering (channeling) measurements show a decrease in the regrowth rate compared to Sb implanted (100)Si. The growth rate for x = 0.08 was characterized by an activation energy of 2.9±0.2 eV. Double crystal X-ray diffraction measurements of lattice distortion show that the radiation damage changes the strain levels of the epilayers depending on the Ge content of the SiGe and on implantation parameters. However, the post-irradiation damage does not reduce the strain stability of SiGe layers with respect to dislocations formation.
AB - Solid phase epitaxial growth (SPEG) and strain recovery of Sb implanted strained Si1-xGex alloy layers are reported. Three sets of Si1-xGex epilayers with compositions of x = 0.08, 0.10 and 0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at energies of 200 and 100 keV, and doses of 1012, 1013 and 1015 cm-2. These alloys were heat-treated in a rapid thermal annealing system at temperatures between 500 and 1000°C for durations between 5 and 600 s. Ion backscattering (channeling) measurements show a decrease in the regrowth rate compared to Sb implanted (100)Si. The growth rate for x = 0.08 was characterized by an activation energy of 2.9±0.2 eV. Double crystal X-ray diffraction measurements of lattice distortion show that the radiation damage changes the strain levels of the epilayers depending on the Ge content of the SiGe and on implantation parameters. However, the post-irradiation damage does not reduce the strain stability of SiGe layers with respect to dislocations formation.
UR - http://www.scopus.com/inward/record.url?scp=3843103544&partnerID=8YFLogxK
U2 - 10.1016/0168-583X(93)90674-U
DO - 10.1016/0168-583X(93)90674-U
M3 - 文章
AN - SCOPUS:3843103544
SN - 0168-583X
VL - 80-81
SP - 751
EP - 754
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - PART 2
ER -