Reduction of SnO2 by a-Si1-xGex

F. Edelman; R. Brener; C. Cytermann; M. Eizenberg; R. Weil; W. Beyer

Reduction of SnO₂ by a-Si_1-xGe_x

F. Edelman^*, R. Brener, C. Cytermann, M. Eizenberg, R. Weil, W. Beyer

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Thin films of amorphous Si_1-xGe_x:H with x=0, 0.3, 0.6, and 1 were deposited by RF glow discharge at 200-250°C on SnO₂/glass substrates. The tin dioxide was reduced by heat treatment at the temperature range of 400-600°C resulting in a layered structure of silicon oxide, tin suboxide and β-Sn which formed at the a-Si_1-xGe_x:H/SnO₂ interface. A strong dependence of the extent of the reduction on the Ge content in the a-Si_1-xGe_x:H films was found: at low temperatures (T<475°C) the Si-rich layers were more reactive, whereas at T>475°C the Ge-rich films totally reduced the SnO₂. The interfacial reduction process was followed by a drop in the transparency and drastic changes in the sheet resistance of the a-Si_1-xGe_x:H/SnO₂ contacts.

Original language	English
Pages (from-to)	589-594
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	337
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: 4 Apr 1994 → 8 Apr 1994

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@article{485e1bca92654d4d98b86d98ba4f8d28,

title = "Reduction of SnO2 by a-Si1-xGex",

abstract = "Thin films of amorphous Si1-xGex:H with x=0, 0.3, 0.6, and 1 were deposited by RF glow discharge at 200-250°C on SnO2/glass substrates. The tin dioxide was reduced by heat treatment at the temperature range of 400-600°C resulting in a layered structure of silicon oxide, tin suboxide and β-Sn which formed at the a-Si1-xGex:H/SnO2 interface. A strong dependence of the extent of the reduction on the Ge content in the a-Si1-xGex:H films was found: at low temperatures (T<475°C) the Si-rich layers were more reactive, whereas at T>475°C the Ge-rich films totally reduced the SnO2. The interfacial reduction process was followed by a drop in the transparency and drastic changes in the sheet resistance of the a-Si1-xGex:H/SnO2 contacts.",

author = "F. Edelman and R. Brener and C. Cytermann and M. Eizenberg and R. Weil and W. Beyer",

year = "1994",

language = "英语",

volume = "337",

pages = "589--594",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",

}

TY - JOUR

T1 - Reduction of SnO2 by a-Si1-xGex

AU - Edelman, F.

AU - Brener, R.

AU - Cytermann, C.

AU - Eizenberg, M.

AU - Weil, R.

AU - Beyer, W.

PY - 1994

Y1 - 1994

N2 - Thin films of amorphous Si1-xGex:H with x=0, 0.3, 0.6, and 1 were deposited by RF glow discharge at 200-250°C on SnO2/glass substrates. The tin dioxide was reduced by heat treatment at the temperature range of 400-600°C resulting in a layered structure of silicon oxide, tin suboxide and β-Sn which formed at the a-Si1-xGex:H/SnO2 interface. A strong dependence of the extent of the reduction on the Ge content in the a-Si1-xGex:H films was found: at low temperatures (T<475°C) the Si-rich layers were more reactive, whereas at T>475°C the Ge-rich films totally reduced the SnO2. The interfacial reduction process was followed by a drop in the transparency and drastic changes in the sheet resistance of the a-Si1-xGex:H/SnO2 contacts.

AB - Thin films of amorphous Si1-xGex:H with x=0, 0.3, 0.6, and 1 were deposited by RF glow discharge at 200-250°C on SnO2/glass substrates. The tin dioxide was reduced by heat treatment at the temperature range of 400-600°C resulting in a layered structure of silicon oxide, tin suboxide and β-Sn which formed at the a-Si1-xGex:H/SnO2 interface. A strong dependence of the extent of the reduction on the Ge content in the a-Si1-xGex:H films was found: at low temperatures (T<475°C) the Si-rich layers were more reactive, whereas at T>475°C the Ge-rich films totally reduced the SnO2. The interfacial reduction process was followed by a drop in the transparency and drastic changes in the sheet resistance of the a-Si1-xGex:H/SnO2 contacts.

UR - http://www.scopus.com/inward/record.url?scp=0028602720&partnerID=8YFLogxK

M3 - 会议文章

AN - SCOPUS:0028602720

SN - 0272-9172

VL - 337

SP - 589

EP - 594

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 4 April 1994 through 8 April 1994

ER -

Reduction of SnO₂ by a-Si_1-xGe_x

Abstract

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