Raman and XPS studies of CIGS/Mo interfaces under various annealing temperatures

Junfeng Han*, Liangqi Ouyang, Daming Zhuang, Cheng Liao, Jiang Liu, Ming Zhao, Li Mei Cha, M. P. Besland

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


In this work, copper indium gallium selenide (CIGS) thin films were prepared by sputtering CIGS quaternary target and subsequent annealing in the 450-550 °C range. For analyses purpose, the films were peeled off from Mo-coated glass and both parts were named as 'CIGS side' and 'Mo side' respectively. Raman spectroscopy and X-Ray Photoelectron Spectroscopy (XPS) were performed to identify crystalline phases and chemical compositions. On the 'Mo side', a MoSex layer was evidenced with increased thickness for higher annealing temperature. On the 'CIGS side', XPS highlighted a continuous Ga enrichment and a Cu content decrease with increasing temperature. Na was detected on both Mo and CIGS sides. Its concentration and distribution relied on the temperature. Finally, relationships between interface modifications and annealing temperature were discussed.

Original languageEnglish
Pages (from-to)278-281
Number of pages4
JournalMaterials Letters
StatePublished - 1 Dec 2014
Externally publishedYes


  • Interfaces
  • Raman
  • Solar energy materials
  • Sputtering
  • Thin films
  • XPS


Dive into the research topics of 'Raman and XPS studies of CIGS/Mo interfaces under various annealing temperatures'. Together they form a unique fingerprint.

Cite this