Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources

Igor Krylov, Xianbin Xu, Kamira Weinfeld, Valentina Korchnoy, Dan Ritter, Moshe Eizenberg

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The authors report on the properties of various conductive nitride (TiN, ZrN, and TaN) films prepared by plasma enhanced atomic layer deposition using either quartz or sapphire inductively coupled plasma (ICP) sources. Different reactive gases (N 2 , NH 3 , and H 2 ) and various pressures during the plasma half-cycle were examined. The sapphire based ICP source enabled higher deposition rates, better crystallization, lower film resistivity, and lower oxygen contamination. The effect of the ICP source material depends strongly on the reactive gas species and pressure. Optimal deposition conditions for both ICP source materials are determined.

Original languageEnglish
Article number010906
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume37
Issue number1
DOIs
StatePublished - 1 Jan 2019
Externally publishedYes

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