Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources

Igor Krylov; Xianbin Xu; Kamira Weinfeld; Valentina Korchnoy; Dan Ritter; Moshe Eizenberg

doi:10.1116/1.5075491

Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources

Igor Krylov, Xianbin Xu, Kamira Weinfeld, Valentina Korchnoy, Dan Ritter, Moshe Eizenberg

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The authors report on the properties of various conductive nitride (TiN, ZrN, and TaN) films prepared by plasma enhanced atomic layer deposition using either quartz or sapphire inductively coupled plasma (ICP) sources. Different reactive gases (N ₂ , NH ₃ , and H ₂ ) and various pressures during the plasma half-cycle were examined. The sapphire based ICP source enabled higher deposition rates, better crystallization, lower film resistivity, and lower oxygen contamination. The effect of the ICP source material depends strongly on the reactive gas species and pressure. Optimal deposition conditions for both ICP source materials are determined.

Original language	English
Article number	010906
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	37
Issue number	1
DOIs	https://doi.org/10.1116/1.5075491
State	Published - 1 Jan 2019
Externally published	Yes

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abstract = " The authors report on the properties of various conductive nitride (TiN, ZrN, and TaN) films prepared by plasma enhanced atomic layer deposition using either quartz or sapphire inductively coupled plasma (ICP) sources. Different reactive gases (N 2 , NH 3 , and H 2 ) and various pressures during the plasma half-cycle were examined. The sapphire based ICP source enabled higher deposition rates, better crystallization, lower film resistivity, and lower oxygen contamination. The effect of the ICP source material depends strongly on the reactive gas species and pressure. Optimal deposition conditions for both ICP source materials are determined.",

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AU - Krylov, Igor

AU - Xu, Xianbin

AU - Weinfeld, Kamira

AU - Korchnoy, Valentina

AU - Ritter, Dan

AU - Eizenberg, Moshe

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The authors report on the properties of various conductive nitride (TiN, ZrN, and TaN) films prepared by plasma enhanced atomic layer deposition using either quartz or sapphire inductively coupled plasma (ICP) sources. Different reactive gases (N 2 , NH 3 , and H 2 ) and various pressures during the plasma half-cycle were examined. The sapphire based ICP source enabled higher deposition rates, better crystallization, lower film resistivity, and lower oxygen contamination. The effect of the ICP source material depends strongly on the reactive gas species and pressure. Optimal deposition conditions for both ICP source materials are determined.

AB - The authors report on the properties of various conductive nitride (TiN, ZrN, and TaN) films prepared by plasma enhanced atomic layer deposition using either quartz or sapphire inductively coupled plasma (ICP) sources. Different reactive gases (N 2 , NH 3 , and H 2 ) and various pressures during the plasma half-cycle were examined. The sapphire based ICP source enabled higher deposition rates, better crystallization, lower film resistivity, and lower oxygen contamination. The effect of the ICP source material depends strongly on the reactive gas species and pressure. Optimal deposition conditions for both ICP source materials are determined.

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ER -

Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources

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