Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures

Lior Kornblum*, Yair Paska, Jonathan A. Rothschild, Hossam Haick, Moshe Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

A method is proposed for characterization of the electrostatics of self-assembled monolayers (SAMs). The method is based on the extraction of the metal's effective work function in metal-oxide-semiconductor capacitors, where the SAM is positioned at the metal-oxide interface. Hexyltrichlorosilane molecules assembled on SiO 2 are used as a model system for this method. A band offset of 0.5 ± 0.15 eV is observed in the SAM sample when compared to a reference with no molecules. Spectroscopy is employed to confirm the presence of silane anchoring groups after metal deposition.

Original languageEnglish
Article number233508
JournalApplied Physics Letters
Volume99
Issue number23
DOIs
StatePublished - 5 Dec 2011
Externally publishedYes

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