Polarized neutron reflectivity of dilute magnetic semiconductors

Amitesh Paul; Heiko Braak; Daniel E. Bürgler; Reinert Schreiber; Diana Rata; Peter Grünberg; Claus M. Schneider; Thomas Brückel

doi:10.1016/j.physb.2007.02.079

Polarized neutron reflectivity of dilute magnetic semiconductors

Amitesh Paul^*, Heiko Braak, Daniel E. Bürgler, Reinert Schreiber, Diana Rata, Peter Grünberg, Claus M. Schneider, Thomas Brückel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report on a polarized neutron reflectivity investigation of the magnetization in Ge-based dilute magnetic semiconductors. We could observe a net magnetization from the splitting of the non-spin flip reflectivity patterns, which measure the magnetic moment parallel and antiparallel to the applied field. This contrast is visible at 50 K, at remanence and it is pronounced at higher fields even at 250 K for an inhomogeneous specimen. For a homogeneous sample the magnetic variation is visible only at 50 K and above 1.0 kOe. Thus, polarized neutron reflectivity can be a useful tool for investigating the magnetism in homogeneous and inhomogeneous thin film magnetic semiconductors.

Original language	English
Pages (from-to)	59-61
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	397
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physb.2007.02.079
State	Published - 15 Jul 2007
Externally published	Yes

Keywords

Magnetic semiconductors
Polarized neutron reflectometry

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10.1016/j.physb.2007.02.079

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title = "Polarized neutron reflectivity of dilute magnetic semiconductors",

abstract = "We report on a polarized neutron reflectivity investigation of the magnetization in Ge-based dilute magnetic semiconductors. We could observe a net magnetization from the splitting of the non-spin flip reflectivity patterns, which measure the magnetic moment parallel and antiparallel to the applied field. This contrast is visible at 50 K, at remanence and it is pronounced at higher fields even at 250 K for an inhomogeneous specimen. For a homogeneous sample the magnetic variation is visible only at 50 K and above 1.0 kOe. Thus, polarized neutron reflectivity can be a useful tool for investigating the magnetism in homogeneous and inhomogeneous thin film magnetic semiconductors.",

keywords = "Magnetic semiconductors, Polarized neutron reflectometry",

author = "Amitesh Paul and Heiko Braak and B{\"u}rgler, {Daniel E.} and Reinert Schreiber and Diana Rata and Peter Gr{\"u}nberg and Schneider, {Claus M.} and Thomas Br{\"u}ckel",

year = "2007",

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doi = "10.1016/j.physb.2007.02.079",

language = "英语",

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pages = "59--61",

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T1 - Polarized neutron reflectivity of dilute magnetic semiconductors

AU - Paul, Amitesh

AU - Braak, Heiko

AU - Bürgler, Daniel E.

AU - Schreiber, Reinert

AU - Rata, Diana

AU - Grünberg, Peter

AU - Schneider, Claus M.

AU - Brückel, Thomas

PY - 2007/7/15

Y1 - 2007/7/15

N2 - We report on a polarized neutron reflectivity investigation of the magnetization in Ge-based dilute magnetic semiconductors. We could observe a net magnetization from the splitting of the non-spin flip reflectivity patterns, which measure the magnetic moment parallel and antiparallel to the applied field. This contrast is visible at 50 K, at remanence and it is pronounced at higher fields even at 250 K for an inhomogeneous specimen. For a homogeneous sample the magnetic variation is visible only at 50 K and above 1.0 kOe. Thus, polarized neutron reflectivity can be a useful tool for investigating the magnetism in homogeneous and inhomogeneous thin film magnetic semiconductors.

AB - We report on a polarized neutron reflectivity investigation of the magnetization in Ge-based dilute magnetic semiconductors. We could observe a net magnetization from the splitting of the non-spin flip reflectivity patterns, which measure the magnetic moment parallel and antiparallel to the applied field. This contrast is visible at 50 K, at remanence and it is pronounced at higher fields even at 250 K for an inhomogeneous specimen. For a homogeneous sample the magnetic variation is visible only at 50 K and above 1.0 kOe. Thus, polarized neutron reflectivity can be a useful tool for investigating the magnetism in homogeneous and inhomogeneous thin film magnetic semiconductors.

KW - Magnetic semiconductors

KW - Polarized neutron reflectometry

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U2 - 10.1016/j.physb.2007.02.079

DO - 10.1016/j.physb.2007.02.079

M3 - 文章

AN - SCOPUS:34250684959

VL - 397

SP - 59

EP - 61

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-2

ER -

Polarized neutron reflectivity of dilute magnetic semiconductors

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Keywords

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