Polarization-Sensitive and Broadband Photodetection Based on a Mixed-Dimensionality TiS3/Si p–n Junction

Yue Niu, Riccardo Frisenda*, Eduardo Flores, Jose R. Ares, Weicheng Jiao, David Perez de Lara, Carlos Sánchez, Rongguo Wang, Isabel J. Ferrer, Andres Castellanos-Gomez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

50 Scopus citations


The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic 2D materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here, the fabrication of a monolithic polarization-sensitive broadband photodetector based on a mixed-dimensionality TiS3/Si p–n junction is demonstrated. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350%, and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization-sensitive systems such as polarimeters.

Original languageEnglish
Article number1800351
JournalAdvanced Optical Materials
Issue number19
StatePublished - 4 Oct 2018
Externally publishedYes


  • optoelectronic devices
  • photodetectors
  • polarimeters
  • p–n junctions
  • titanium trisulfide
  • trichalcogenides


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