Polarization-Sensitive and Broadband Photodetection Based on a Mixed-Dimensionality TiS3/Si p–n Junction

Yue Niu; Riccardo Frisenda; Eduardo Flores; Jose R. Ares; Weicheng Jiao; David Perez de Lara; Carlos Sánchez; Rongguo Wang; Isabel J. Ferrer; Andres Castellanos-Gomez

doi:10.1002/adom.201800351

Polarization-Sensitive and Broadband Photodetection Based on a Mixed-Dimensionality TiS₃/Si p–n Junction

Yue Niu, Riccardo Frisenda^*, Eduardo Flores, Jose R. Ares, Weicheng Jiao, David Perez de Lara, Carlos Sánchez, Rongguo Wang, Isabel J. Ferrer, Andres Castellanos-Gomez

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic 2D materials such as TiS₃ combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here, the fabrication of a monolithic polarization-sensitive broadband photodetector based on a mixed-dimensionality TiS₃/Si p–n junction is demonstrated. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350%, and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization-sensitive systems such as polarimeters.

Original language	English
Article number	1800351
Journal	Advanced Optical Materials
Volume	6
Issue number	19
DOIs	https://doi.org/10.1002/adom.201800351
State	Published - 4 Oct 2018
Externally published	Yes

Keywords

optoelectronic devices
photodetectors
polarimeters
p–n junctions
titanium trisulfide
trichalcogenides

Access to Document

10.1002/adom.201800351

Cite this

@article{eede2c610b1c4a8fbcdcaa13b75b4106,

title = "Polarization-Sensitive and Broadband Photodetection Based on a Mixed-Dimensionality TiS3/Si p–n Junction",

abstract = "The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic 2D materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here, the fabrication of a monolithic polarization-sensitive broadband photodetector based on a mixed-dimensionality TiS3/Si p–n junction is demonstrated. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350%, and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization-sensitive systems such as polarimeters.",

keywords = "optoelectronic devices, photodetectors, polarimeters, p–n junctions, titanium trisulfide, trichalcogenides",

author = "Yue Niu and Riccardo Frisenda and Eduardo Flores and Ares, {Jose R.} and Weicheng Jiao and {Perez de Lara}, David and Carlos S{\'a}nchez and Rongguo Wang and Ferrer, {Isabel J.} and Andres Castellanos-Gomez",

note = "Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2018",

month = oct,

day = "4",

doi = "10.1002/adom.201800351",

language = "英语",

volume = "6",

journal = "Advanced Optical Materials",

issn = "2195-1071",

publisher = "John Wiley and Sons Inc.",

number = "19",

}

Polarization-Sensitive and Broadband Photodetection Based on a Mixed-Dimensionality TiS₃/Si p–n Junction. / Niu, Yue; Frisenda, Riccardo; Flores, Eduardo; Ares, Jose R.; Jiao, Weicheng; Perez de Lara, David; Sánchez, Carlos; Wang, Rongguo; Ferrer, Isabel J.; Castellanos-Gomez, Andres.

In: Advanced Optical Materials, Vol. 6, No. 19, 1800351, 04.10.2018.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Polarization-Sensitive and Broadband Photodetection Based on a Mixed-Dimensionality TiS3/Si p–n Junction

AU - Niu, Yue

AU - Frisenda, Riccardo

AU - Flores, Eduardo

AU - Ares, Jose R.

AU - Jiao, Weicheng

AU - Perez de Lara, David

AU - Sánchez, Carlos

AU - Wang, Rongguo

AU - Ferrer, Isabel J.

AU - Castellanos-Gomez, Andres

PY - 2018/10/4

Y1 - 2018/10/4

N2 - The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic 2D materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here, the fabrication of a monolithic polarization-sensitive broadband photodetector based on a mixed-dimensionality TiS3/Si p–n junction is demonstrated. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350%, and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization-sensitive systems such as polarimeters.

AB - The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic 2D materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here, the fabrication of a monolithic polarization-sensitive broadband photodetector based on a mixed-dimensionality TiS3/Si p–n junction is demonstrated. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350%, and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization-sensitive systems such as polarimeters.

KW - optoelectronic devices

KW - photodetectors

KW - polarimeters

KW - p–n junctions

KW - titanium trisulfide

KW - trichalcogenides

UR - http://www.scopus.com/inward/record.url?scp=85054298377&partnerID=8YFLogxK

U2 - 10.1002/adom.201800351

DO - 10.1002/adom.201800351

M3 - 文章

AN - SCOPUS:85054298377

VL - 6

JO - Advanced Optical Materials

JF - Advanced Optical Materials

SN - 2195-1071

IS - 19

M1 - 1800351

ER -

Polarization-Sensitive and Broadband Photodetection Based on a Mixed-Dimensionality TiS₃/Si p–n Junction

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this