Phase transformations in the Cr/a-Si system during low temperature annealing

F. Edelman; C. Cytermann; R. Brener; M. Eizenberg; R. Weil; W. Beyer

doi:10.1016/S0022-3093(05)80305-9

Phase transformations in the Cr/a-Si system during low temperature annealing

F. Edelman^*, C. Cytermann, R. Brener, M. Eizenberg, R. Weil, W. Beyer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Heat treatments in vacuum of Cr/a-Si:H, F structures lead to silicide formation at 450-600C. The presence of F in a-Si promotes the Cr silicide formation. The composition of the Cr silicides was found to depend on the relative thickness of the Cr and a-Si films. In the early stages of phase formation in the 400Å Cr/500Å a-Si system, with an atomic ratio of about 1:1 the first phases to appear were CrSi or CrSi₂, then other silicide phases, Cr₅Si₃, and Cr₃Si appeared. In the system with 1500Å Cr/1μm a-Si, with a surplus of Si, the dominant first phase was CrSi₂, and then Cr₃Si and Cr₅Si₃ appeared.

Original language	English
Pages (from-to)	1063-1066
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	137-138
Issue number	PART 2
DOIs	https://doi.org/10.1016/S0022-3093(05)80305-9
State	Published - 1991
Externally published	Yes

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@article{ff2682938f024d6398beb3cef619843d,

title = "Phase transformations in the Cr/a-Si system during low temperature annealing",

abstract = "Heat treatments in vacuum of Cr/a-Si:H, F structures lead to silicide formation at 450-600C. The presence of F in a-Si promotes the Cr silicide formation. The composition of the Cr silicides was found to depend on the relative thickness of the Cr and a-Si films. In the early stages of phase formation in the 400{\AA} Cr/500{\AA} a-Si system, with an atomic ratio of about 1:1 the first phases to appear were CrSi or CrSi2, then other silicide phases, Cr5Si3, and Cr3Si appeared. In the system with 1500{\AA} Cr/1μm a-Si, with a surplus of Si, the dominant first phase was CrSi2, and then Cr3Si and Cr5Si3 appeared.",

author = "F. Edelman and C. Cytermann and R. Brener and M. Eizenberg and R. Weil and W. Beyer",

note = "Funding Information: 2. METHODS AND MATERIALS Silicide formation was studied in Cr/a-Si thin film samples by Auger Electron Spectroscopy, X-ray Diffraction and in situ Transmission Electron Microscopy (AES, XRD, and TEM methods, respectively). The samples had a configuration of Cr/a-Si/c-Si for the AES and XRD measurements, while for the TEM measurements the configuration was Cr/a-Si/cleaved NaC1. The a-Si was produced either from a glow discharge in Sill4 *This research was supported in part by a grant from the National Council for Research and Developement, Israel, and the Forschungszentrum, Juelich, Germany.",

year = "1991",

doi = "10.1016/S0022-3093(05)80305-9",

language = "英语",

volume = "137-138",

pages = "1063--1066",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

number = "PART 2",

}

TY - JOUR

T1 - Phase transformations in the Cr/a-Si system during low temperature annealing

AU - Edelman, F.

AU - Cytermann, C.

AU - Brener, R.

AU - Eizenberg, M.

AU - Weil, R.

AU - Beyer, W.

N1 - Funding Information: 2. METHODS AND MATERIALS Silicide formation was studied in Cr/a-Si thin film samples by Auger Electron Spectroscopy, X-ray Diffraction and in situ Transmission Electron Microscopy (AES, XRD, and TEM methods, respectively). The samples had a configuration of Cr/a-Si/c-Si for the AES and XRD measurements, while for the TEM measurements the configuration was Cr/a-Si/cleaved NaC1. The a-Si was produced either from a glow discharge in Sill4 *This research was supported in part by a grant from the National Council for Research and Developement, Israel, and the Forschungszentrum, Juelich, Germany.

PY - 1991

Y1 - 1991

N2 - Heat treatments in vacuum of Cr/a-Si:H, F structures lead to silicide formation at 450-600C. The presence of F in a-Si promotes the Cr silicide formation. The composition of the Cr silicides was found to depend on the relative thickness of the Cr and a-Si films. In the early stages of phase formation in the 400Å Cr/500Å a-Si system, with an atomic ratio of about 1:1 the first phases to appear were CrSi or CrSi2, then other silicide phases, Cr5Si3, and Cr3Si appeared. In the system with 1500Å Cr/1μm a-Si, with a surplus of Si, the dominant first phase was CrSi2, and then Cr3Si and Cr5Si3 appeared.

AB - Heat treatments in vacuum of Cr/a-Si:H, F structures lead to silicide formation at 450-600C. The presence of F in a-Si promotes the Cr silicide formation. The composition of the Cr silicides was found to depend on the relative thickness of the Cr and a-Si films. In the early stages of phase formation in the 400Å Cr/500Å a-Si system, with an atomic ratio of about 1:1 the first phases to appear were CrSi or CrSi2, then other silicide phases, Cr5Si3, and Cr3Si appeared. In the system with 1500Å Cr/1μm a-Si, with a surplus of Si, the dominant first phase was CrSi2, and then Cr3Si and Cr5Si3 appeared.

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U2 - 10.1016/S0022-3093(05)80305-9

DO - 10.1016/S0022-3093(05)80305-9

M3 - 文章

AN - SCOPUS:4243222600

SN - 0022-3093

VL - 137-138

SP - 1063

EP - 1066

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Phase transformations in the Cr/a-Si system during low temperature annealing

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