Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications

Igor Krylov, Boaz Pokroy, Dan Ritter, Moshe Eizenberg

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The passivation of InGaAs by thin AlN layers allows a significant reduction of the interface state density compared to that of the widely used Al2O3/InGaAs structure. The influence of the AlN layer thickness on the interface electrical properties, as well as the role of the post-deposition annealing, was carefully examined. Ultrathin AlN layers (∼1 nm) provide high quality interfacial electrical properties after a mild anneal (400 °C). Thick AlN passivation layers require annealing at higher temperature (500 °C) to achieve low interface states density. Possible explanations of the observed trend are suggested.

Original languageEnglish
Article number011205
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume35
Issue number1
DOIs
StatePublished - 1 Jan 2017
Externally publishedYes

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