Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications

TY - JOUR

T1 - Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications

AU - Krylov, Igor

AU - Pokroy, Boaz

AU - Ritter, Dan

AU - Eizenberg, Moshe

N1 - Publisher Copyright: © 2017 American Vacuum Society.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The passivation of InGaAs by thin AlN layers allows a significant reduction of the interface state density compared to that of the widely used Al2O3/InGaAs structure. The influence of the AlN layer thickness on the interface electrical properties, as well as the role of the post-deposition annealing, was carefully examined. Ultrathin AlN layers (∼1 nm) provide high quality interfacial electrical properties after a mild anneal (400 °C). Thick AlN passivation layers require annealing at higher temperature (500 °C) to achieve low interface states density. Possible explanations of the observed trend are suggested.

AB - The passivation of InGaAs by thin AlN layers allows a significant reduction of the interface state density compared to that of the widely used Al2O3/InGaAs structure. The influence of the AlN layer thickness on the interface electrical properties, as well as the role of the post-deposition annealing, was carefully examined. Ultrathin AlN layers (∼1 nm) provide high quality interfacial electrical properties after a mild anneal (400 °C). Thick AlN passivation layers require annealing at higher temperature (500 °C) to achieve low interface states density. Possible explanations of the observed trend are suggested.

UR - http://www.scopus.com/inward/record.url?scp=85008675875&partnerID=8YFLogxK

U2 - 10.1116/1.4973300

DO - 10.1116/1.4973300

M3 - 文章

AN - SCOPUS:85008675875

SN - 2166-2746

VL - 35

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 1

M1 - 011205

ER -