Novel 0.25 μm via plug process using low temperature CVD Al/TiN

G. A. Dixit*, Ajit Paranjpe, Qi Zhong Hong, L. M. Ting, J. D. Luttmer, R. H. Havemann, Drew Paul, Al Morrison, Karl Littau, M. Eizenberg, A. K. Sinha

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

21 Scopus citations

Abstract

A novel aluminum plug process is described which offers over a 3× reduction in a via resistance as compared with current tungsten plug technology. The performance advantage of the new process is further enhanced by its compatibility with low thermal budget, low-k dielectric materials, allowing significant reduction in the overall interconnect RC time constant. Key features of the Al plug technology include an over-hang free MOCVD (metal organic CVD) TiN liner, a single step low temperature (260°C) chemical vapor deposition (LTCVD) of aluminum (resistivity < 3 μohm-cm) and copper doping from an overlying PVD Al-Cu film. Double-level metal interconnects with 0.3 μm vias and integrated low-k dielectrics were successfully fabricated using the new CVD TiN/Al technology. The 0.3 μm diameter CVD Al plugs yielded > 3× lower via resistance compared with W plugs (1.5 vs. 5.0 ohms) with no degradation in electromigration reliability.

Original languageEnglish
Pages (from-to)1001-1003
Number of pages3
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: 10 Dec 199513 Dec 1995

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