New method for determining flat-band voltage in high mobility semiconductors

Roy Winter, Jaesoo Ahn, Paul C. McIntyre, Moshe Eizenberg

Research output: Contribution to journalArticlepeer-review

69 Scopus citations

Abstract

The method that is commonly used for determining the flat-band voltage (VFB) and the flat-band capacitance (CFB) of metal oxide semiconductor (MOS) capacitors depends on many parameters and can only be used in the case of low interface trap density (Dit) when the capacitance-voltage measurements are carried out at high frequencies. This paper demonstrates a new and simple method for determining VFB and C FB. The method is based on the point of inflection in the capacitance-voltage curve. This method does not require the knowledge of material or experimental parameters and can be used on high Dit and high border trap density MOS structures at all frequencies.

Original languageEnglish
Article number030604
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume31
Issue number3
DOIs
StatePublished - May 2013
Externally publishedYes

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