Modifications of CVD-RuOx films induced by various processes

P. Gopal Ganesan, M. Eizenberg*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

A wide variety of post deposition thermal treatments was carried out on Ru and RuO2 films prepared by chemical vapor deposition on a 50 Å thick sputter deposited Ru seed. These treatments lead to identify three different routes with respect to modifications in the film microstructure: (1) nitrogen and forming gas annealing and Rapid Thermal annealing in Nitrogen ambient (RTN) on Ru films as well as nitrogen gas annealing, RTN treatment at 600 °C, and Rapid Thermal annealing in Oxygen ambient (RTO) on RuO2 films, do not change the film phase, but lead to grain growth and reduction in the electrical resistivity of the film. (2) Forming gas annealing and RTN treatment at 750 °C for 60 s result in reduction of RuO2 to Ru, leading to formation of cracks and increase of surface roughness in the film, respectively. (3) An RTO treatment oxidizes Ru films with some protrusion formation in the resultant oxide.

Original languageEnglish
Pages (from-to)449-456
Number of pages8
JournalMicroelectronic Engineering
Volume64
Issue number1-4
DOIs
StatePublished - Oct 2002
Externally publishedYes
EventMAM2002 - Vaals, Netherlands
Duration: 3 Mar 20026 Mar 2002

Keywords

  • Annealing effect
  • CVD
  • Ruthenium
  • Ruthenium oxide

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