Modifications of CVD-RuOx films induced by various processes

P. Gopal Ganesan; M. Eizenberg

doi:10.1016/S0167-9317(02)00820-1

Modifications of CVD-RuO_x films induced by various processes

P. Gopal Ganesan, M. Eizenberg^*

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

A wide variety of post deposition thermal treatments was carried out on Ru and RuO₂ films prepared by chemical vapor deposition on a 50 Å thick sputter deposited Ru seed. These treatments lead to identify three different routes with respect to modifications in the film microstructure: (1) nitrogen and forming gas annealing and Rapid Thermal annealing in Nitrogen ambient (RTN) on Ru films as well as nitrogen gas annealing, RTN treatment at 600 °C, and Rapid Thermal annealing in Oxygen ambient (RTO) on RuO₂ films, do not change the film phase, but lead to grain growth and reduction in the electrical resistivity of the film. (2) Forming gas annealing and RTN treatment at 750 °C for 60 s result in reduction of RuO₂ to Ru, leading to formation of cracks and increase of surface roughness in the film, respectively. (3) An RTO treatment oxidizes Ru films with some protrusion formation in the resultant oxide.

Original language	English
Pages (from-to)	449-456
Number of pages	8
Journal	Microelectronic Engineering
Volume	64
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(02)00820-1
State	Published - Oct 2002
Externally published	Yes
Event	MAM2002 - Vaals, Netherlands Duration: 3 Mar 2002 → 6 Mar 2002

Keywords

Annealing effect
CVD
Ruthenium
Ruthenium oxide

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10.1016/S0167-9317(02)00820-1

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title = "Modifications of CVD-RuOx films induced by various processes",

abstract = "A wide variety of post deposition thermal treatments was carried out on Ru and RuO2 films prepared by chemical vapor deposition on a 50 {\AA} thick sputter deposited Ru seed. These treatments lead to identify three different routes with respect to modifications in the film microstructure: (1) nitrogen and forming gas annealing and Rapid Thermal annealing in Nitrogen ambient (RTN) on Ru films as well as nitrogen gas annealing, RTN treatment at 600 °C, and Rapid Thermal annealing in Oxygen ambient (RTO) on RuO2 films, do not change the film phase, but lead to grain growth and reduction in the electrical resistivity of the film. (2) Forming gas annealing and RTN treatment at 750 °C for 60 s result in reduction of RuO2 to Ru, leading to formation of cracks and increase of surface roughness in the film, respectively. (3) An RTO treatment oxidizes Ru films with some protrusion formation in the resultant oxide.",

keywords = "Annealing effect, CVD, Ruthenium, Ruthenium oxide",

author = "{Gopal Ganesan}, P. and M. Eizenberg",

note = "Funding Information: The authors gratefully thank C. Dornfest and Dr C. Wade (both of Applied Materials, Inc.) for sample preparation, Dr R. Brener (Technion) for performing AES measurements, Dr S. Berger (Technion) for stress measurements, and Z. Shpilman (Technion) for assistance in electrical resistivity measurements. This work was supported by Applied Materials Inc. (Santa Clara, CA, USA). ; MAM2002 ; Conference date: 03-03-2002 Through 06-03-2002",

year = "2002",

month = oct,

doi = "10.1016/S0167-9317(02)00820-1",

language = "英语",

volume = "64",

pages = "449--456",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Modifications of CVD-RuOx films induced by various processes

AU - Gopal Ganesan, P.

AU - Eizenberg, M.

N1 - Funding Information: The authors gratefully thank C. Dornfest and Dr C. Wade (both of Applied Materials, Inc.) for sample preparation, Dr R. Brener (Technion) for performing AES measurements, Dr S. Berger (Technion) for stress measurements, and Z. Shpilman (Technion) for assistance in electrical resistivity measurements. This work was supported by Applied Materials Inc. (Santa Clara, CA, USA).

PY - 2002/10

Y1 - 2002/10

N2 - A wide variety of post deposition thermal treatments was carried out on Ru and RuO2 films prepared by chemical vapor deposition on a 50 Å thick sputter deposited Ru seed. These treatments lead to identify three different routes with respect to modifications in the film microstructure: (1) nitrogen and forming gas annealing and Rapid Thermal annealing in Nitrogen ambient (RTN) on Ru films as well as nitrogen gas annealing, RTN treatment at 600 °C, and Rapid Thermal annealing in Oxygen ambient (RTO) on RuO2 films, do not change the film phase, but lead to grain growth and reduction in the electrical resistivity of the film. (2) Forming gas annealing and RTN treatment at 750 °C for 60 s result in reduction of RuO2 to Ru, leading to formation of cracks and increase of surface roughness in the film, respectively. (3) An RTO treatment oxidizes Ru films with some protrusion formation in the resultant oxide.

AB - A wide variety of post deposition thermal treatments was carried out on Ru and RuO2 films prepared by chemical vapor deposition on a 50 Å thick sputter deposited Ru seed. These treatments lead to identify three different routes with respect to modifications in the film microstructure: (1) nitrogen and forming gas annealing and Rapid Thermal annealing in Nitrogen ambient (RTN) on Ru films as well as nitrogen gas annealing, RTN treatment at 600 °C, and Rapid Thermal annealing in Oxygen ambient (RTO) on RuO2 films, do not change the film phase, but lead to grain growth and reduction in the electrical resistivity of the film. (2) Forming gas annealing and RTN treatment at 750 °C for 60 s result in reduction of RuO2 to Ru, leading to formation of cracks and increase of surface roughness in the film, respectively. (3) An RTO treatment oxidizes Ru films with some protrusion formation in the resultant oxide.

KW - Annealing effect

KW - CVD

KW - Ruthenium

KW - Ruthenium oxide

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U2 - 10.1016/S0167-9317(02)00820-1

DO - 10.1016/S0167-9317(02)00820-1

M3 - 会议文章

AN - SCOPUS:0036776577

SN - 0167-9317

VL - 64

SP - 449

EP - 456

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

T2 - MAM2002

Y2 - 3 March 2002 through 6 March 2002

ER -

Modifications of CVD-RuO_x films induced by various processes

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Keywords

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