Microwave-assisted hierarchical bismuth oxide worm-like nanostructured films as room-temperature hydrogen gas sensors

Pritamkumar V. Shinde, Balaji G. Ghule, Shoyebmohamad F. Shaikh, Nanasaheb M. Shinde, Sushil S. Sangale, V. V. Jadhav, Seog Young Yoon, Kwang Ho Kim, Rajaram S. Mane*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

With a plausible reaction mechanism, a simple and rapid, microwave-assisted chemical synthesis method has been proposed to obtain hierarchical worm-like bismuth oxide (Bi2O3) nanostructured films as an efficient and effective hydrogen (H2) gas sensors. The structural elucidation demonstrates a diffraction peak at 27.94° for [201] directional growth with a lattice fringe distance of 0.31 nm. The Raman shift and photoelectron spectroscopy measurements, additionally, support the formation of the phase pure Bi2O3. Estimated 14.88 m2g-1 specific surface area and 10–20 nm pore-size of as-obtained Bi2O3 evidences its mesoporous character. Among various gases tested, H2 gas endows 50% sensing performance for hierarchical Bi2O3 worm-like film sensors with a considerable response of 42 s and recovery of 83 s for 100 ppm H2 gas concentration at room-temperature, suggesting an importance of proposed method in obtaining the phase pure Bi2O3 film sensors. The H2 gas sensing mechanism has been proposed on X-ray photoelectron spectroscopy results. Finally, an influence of a relative humidity on the Bi2O3 film sensor has demonstrated 32% response at 20% RH with response/recovery time of just 7/10 s, owing to its unique surface architecture, high surface area and mesoporous nature.

Original languageEnglish
Pages (from-to)244-251
Number of pages8
JournalJournal of Alloys and Compounds
Volume802
DOIs
StatePublished - 25 Sep 2019

Keywords

  • Hierarchical worm nanostructured films
  • Hydrogen gas sensors
  • Microwave-assisted BiO

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