Microscopic simulations of high harmonic generation from semiconductors

Alexander Trautmann; Ruixin Zuo; Guifang Wang; Wolf-Rüdiger Hannes; Shidong Yang; Le Huu Thong; Cong Ngo; Johannes Steiner; Marcelo Ciappina; Matthias Reichelt; Huynh Thanh Duc; Xiaohong Song; Weifeng Yang; Torsten Meier

doi:10.1117/12.2607447

Microscopic simulations of high harmonic generation from semiconductors

Alexander Trautmann^*, Ruixin Zuo, Guifang Wang, Wolf-Rüdiger Hannes, Shidong Yang, Le Huu Thong, Cong Ngo, Johannes Steiner, Marcelo Ciappina, Matthias Reichelt, Huynh Thanh Duc, Xiaohong Song, Weifeng Yang, Torsten Meier

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Conference article

Abstract

The semiconductor Bloch equations provide a very versatile and microscopic approach to compute and analyze optical and electronic properties of semiconductors. Here, we focus on high harmonic generation arising from the driving of crystalline systems with very strong optical and Terahertz pulses. Implementing a proper gauge allows us to solve the semiconductor Bloch equations in the length gauge. The length gauge turns out to be advantageous since it converges for a smaller number of bands than the velocity gauge and, in addition, enables a unique distinction between inter- and intraband contributions. Besides odd harmonics polarized parallel to the incoming field our approach also describes even harmonics which originate from the Berry curvature and are polarized perpendicular to the incident field. Next, we demonstrate that the electron and hole collision/recombination dynamics is mainly responsible for the anisotropy of the interband high harmonic generation. Our findings connect the electron/hole backward scattering to van Hove singularities and the forward scattering with critical lines in the band structure and we show that this dynamics can be controlled by properly designed two-color fields. Furthermore, we consider excitonic effects within a two-band model and show that they can strongly enhance the high harmonic emission intensity for suitably chosen incident pulses. When an odd-order harmonic corresponds to the energy of the 1s exciton this harmonic is several orders of magnitude larger than the emission from non-interacting electrons and holes.

Original language	English
Journal	Ultrafast Phenomena and Nanophotonics XXVI
DOIs	https://doi.org/10.1117/12.2607447
State	E-pub ahead of print - 20 Feb 2022

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@article{cc7c9d895aa44f5195876925f655774a,

title = "Microscopic simulations of high harmonic generation from semiconductors",

abstract = "The semiconductor Bloch equations provide a very versatile and microscopic approach to compute and analyze optical and electronic properties of semiconductors. Here, we focus on high harmonic generation arising from the driving of crystalline systems with very strong optical and Terahertz pulses. Implementing a proper gauge allows us to solve the semiconductor Bloch equations in the length gauge. The length gauge turns out to be advantageous since it converges for a smaller number of bands than the velocity gauge and, in addition, enables a unique distinction between inter- and intraband contributions. Besides odd harmonics polarized parallel to the incoming field our approach also describes even harmonics which originate from the Berry curvature and are polarized perpendicular to the incident field. Next, we demonstrate that the electron and hole collision/recombination dynamics is mainly responsible for the anisotropy of the interband high harmonic generation. Our findings connect the electron/hole backward scattering to van Hove singularities and the forward scattering with critical lines in the band structure and we show that this dynamics can be controlled by properly designed two-color fields. Furthermore, we consider excitonic effects within a two-band model and show that they can strongly enhance the high harmonic emission intensity for suitably chosen incident pulses. When an odd-order harmonic corresponds to the energy of the 1s exciton this harmonic is several orders of magnitude larger than the emission from non-interacting electrons and holes.",

author = "Alexander Trautmann and Ruixin Zuo and Guifang Wang and Wolf-R{\"u}diger Hannes and Shidong Yang and Thong, {Le Huu} and Cong Ngo and Johannes Steiner and Marcelo Ciappina and Matthias Reichelt and Duc, {Huynh Thanh} and Xiaohong Song and Weifeng Yang and Torsten Meier",

year = "2022",

month = feb,

day = "20",

doi = "10.1117/12.2607447",

language = "英语",

journal = "Ultrafast Phenomena and Nanophotonics XXVI",

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T1 - Microscopic simulations of high harmonic generation from semiconductors

AU - Trautmann, Alexander

AU - Zuo, Ruixin

AU - Wang, Guifang

AU - Hannes, Wolf-Rüdiger

AU - Yang, Shidong

AU - Thong, Le Huu

AU - Ngo, Cong

AU - Steiner, Johannes

AU - Ciappina, Marcelo

AU - Reichelt, Matthias

AU - Duc, Huynh Thanh

AU - Song, Xiaohong

AU - Yang, Weifeng

AU - Meier, Torsten

PY - 2022/2/20

Y1 - 2022/2/20

N2 - The semiconductor Bloch equations provide a very versatile and microscopic approach to compute and analyze optical and electronic properties of semiconductors. Here, we focus on high harmonic generation arising from the driving of crystalline systems with very strong optical and Terahertz pulses. Implementing a proper gauge allows us to solve the semiconductor Bloch equations in the length gauge. The length gauge turns out to be advantageous since it converges for a smaller number of bands than the velocity gauge and, in addition, enables a unique distinction between inter- and intraband contributions. Besides odd harmonics polarized parallel to the incoming field our approach also describes even harmonics which originate from the Berry curvature and are polarized perpendicular to the incident field. Next, we demonstrate that the electron and hole collision/recombination dynamics is mainly responsible for the anisotropy of the interband high harmonic generation. Our findings connect the electron/hole backward scattering to van Hove singularities and the forward scattering with critical lines in the band structure and we show that this dynamics can be controlled by properly designed two-color fields. Furthermore, we consider excitonic effects within a two-band model and show that they can strongly enhance the high harmonic emission intensity for suitably chosen incident pulses. When an odd-order harmonic corresponds to the energy of the 1s exciton this harmonic is several orders of magnitude larger than the emission from non-interacting electrons and holes.

AB - The semiconductor Bloch equations provide a very versatile and microscopic approach to compute and analyze optical and electronic properties of semiconductors. Here, we focus on high harmonic generation arising from the driving of crystalline systems with very strong optical and Terahertz pulses. Implementing a proper gauge allows us to solve the semiconductor Bloch equations in the length gauge. The length gauge turns out to be advantageous since it converges for a smaller number of bands than the velocity gauge and, in addition, enables a unique distinction between inter- and intraband contributions. Besides odd harmonics polarized parallel to the incoming field our approach also describes even harmonics which originate from the Berry curvature and are polarized perpendicular to the incident field. Next, we demonstrate that the electron and hole collision/recombination dynamics is mainly responsible for the anisotropy of the interband high harmonic generation. Our findings connect the electron/hole backward scattering to van Hove singularities and the forward scattering with critical lines in the band structure and we show that this dynamics can be controlled by properly designed two-color fields. Furthermore, we consider excitonic effects within a two-band model and show that they can strongly enhance the high harmonic emission intensity for suitably chosen incident pulses. When an odd-order harmonic corresponds to the energy of the 1s exciton this harmonic is several orders of magnitude larger than the emission from non-interacting electrons and holes.

U2 - 10.1117/12.2607447

DO - 10.1117/12.2607447

M3 - 会议文章

JO - Ultrafast Phenomena and Nanophotonics XXVI

JF - Ultrafast Phenomena and Nanophotonics XXVI

ER -

Microscopic simulations of high harmonic generation from semiconductors

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