Metal- and oxide-related hydrogen-induced dipoles at the Pt/HfO2 interface

N. M. Kolomiiets; V. V. Afanas'ev; A. Stesmans; S. Fadida; M. Eizenberg

doi:10.1016/j.mee.2017.05.051

Metal- and oxide-related hydrogen-induced dipoles at the Pt/HfO₂ interface

N. M. Kolomiiets^*, V. V. Afanas'ev, A. Stesmans, S. Fadida, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Such technologically abundant agent as hydrogen has a strong effect on the metal/oxide interface energy barrier. Internal photoemission analysis of electron barrier height variations at Pt/HfO₂ interfaces caused by annealing in hydrogen reveals the formation of a significant (≥ 0.4 eV) electrostatic dipole layer. The orientation of the H-induced dipole appears to be sensitive to the growth conditions and treatments, e.g., Hf precursor used in the atomic layer deposition (ALD) process: In the case of the HfCl₄ precursor, annealing in H₂ leads to barrier lowering, whereas the barrier becomes higher in samples grown by using tetrakis(dimethylamido)hafnium. These findings indicate that hydrogen may form dipoles of opposite orientation through two different mechanisms: The positive dipole is caused by H interaction with the metal surface, which can also be found at interfaces of Pt with other oxides such as SiO₂ and Al₂O₃. By contrast, the sensitivity of the negative dipole formation to the HfO₂ ALD chemistry suggests it to be related to a negatively charged bonded state of hydrogen in the near-interface oxide. Moreover, the formation of positive dipole is also observed after high temperature anneal in nitrogen suggesting the contribution of additional mechanisms of dipole formation.

Original language	English
Pages (from-to)	304-307
Number of pages	4
Journal	Microelectronic Engineering
Volume	178
DOIs	https://doi.org/10.1016/j.mee.2017.05.051
State	Published - 25 Jun 2017
Externally published	Yes

Keywords

Dipole
Effective work function
Interface barrier
Internal photoemission

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10.1016/j.mee.2017.05.051

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title = "Metal- and oxide-related hydrogen-induced dipoles at the Pt/HfO2 interface",

abstract = "Such technologically abundant agent as hydrogen has a strong effect on the metal/oxide interface energy barrier. Internal photoemission analysis of electron barrier height variations at Pt/HfO2 interfaces caused by annealing in hydrogen reveals the formation of a significant (≥ 0.4 eV) electrostatic dipole layer. The orientation of the H-induced dipole appears to be sensitive to the growth conditions and treatments, e.g., Hf precursor used in the atomic layer deposition (ALD) process: In the case of the HfCl4 precursor, annealing in H2 leads to barrier lowering, whereas the barrier becomes higher in samples grown by using tetrakis(dimethylamido)hafnium. These findings indicate that hydrogen may form dipoles of opposite orientation through two different mechanisms: The positive dipole is caused by H interaction with the metal surface, which can also be found at interfaces of Pt with other oxides such as SiO2 and Al2O3. By contrast, the sensitivity of the negative dipole formation to the HfO2 ALD chemistry suggests it to be related to a negatively charged bonded state of hydrogen in the near-interface oxide. Moreover, the formation of positive dipole is also observed after high temperature anneal in nitrogen suggesting the contribution of additional mechanisms of dipole formation.",

keywords = "Dipole, Effective work function, Interface barrier, Internal photoemission",

author = "Kolomiiets, {N. M.} and Afanas'ev, {V. V.} and A. Stesmans and S. Fadida and M. Eizenberg",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = jun,

day = "25",

doi = "10.1016/j.mee.2017.05.051",

language = "英语",

volume = "178",

pages = "304--307",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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TY - JOUR

T1 - Metal- and oxide-related hydrogen-induced dipoles at the Pt/HfO2 interface

AU - Kolomiiets, N. M.

AU - Afanas'ev, V. V.

AU - Stesmans, A.

AU - Fadida, S.

AU - Eizenberg, M.

PY - 2017/6/25

Y1 - 2017/6/25

N2 - Such technologically abundant agent as hydrogen has a strong effect on the metal/oxide interface energy barrier. Internal photoemission analysis of electron barrier height variations at Pt/HfO2 interfaces caused by annealing in hydrogen reveals the formation of a significant (≥ 0.4 eV) electrostatic dipole layer. The orientation of the H-induced dipole appears to be sensitive to the growth conditions and treatments, e.g., Hf precursor used in the atomic layer deposition (ALD) process: In the case of the HfCl4 precursor, annealing in H2 leads to barrier lowering, whereas the barrier becomes higher in samples grown by using tetrakis(dimethylamido)hafnium. These findings indicate that hydrogen may form dipoles of opposite orientation through two different mechanisms: The positive dipole is caused by H interaction with the metal surface, which can also be found at interfaces of Pt with other oxides such as SiO2 and Al2O3. By contrast, the sensitivity of the negative dipole formation to the HfO2 ALD chemistry suggests it to be related to a negatively charged bonded state of hydrogen in the near-interface oxide. Moreover, the formation of positive dipole is also observed after high temperature anneal in nitrogen suggesting the contribution of additional mechanisms of dipole formation.

AB - Such technologically abundant agent as hydrogen has a strong effect on the metal/oxide interface energy barrier. Internal photoemission analysis of electron barrier height variations at Pt/HfO2 interfaces caused by annealing in hydrogen reveals the formation of a significant (≥ 0.4 eV) electrostatic dipole layer. The orientation of the H-induced dipole appears to be sensitive to the growth conditions and treatments, e.g., Hf precursor used in the atomic layer deposition (ALD) process: In the case of the HfCl4 precursor, annealing in H2 leads to barrier lowering, whereas the barrier becomes higher in samples grown by using tetrakis(dimethylamido)hafnium. These findings indicate that hydrogen may form dipoles of opposite orientation through two different mechanisms: The positive dipole is caused by H interaction with the metal surface, which can also be found at interfaces of Pt with other oxides such as SiO2 and Al2O3. By contrast, the sensitivity of the negative dipole formation to the HfO2 ALD chemistry suggests it to be related to a negatively charged bonded state of hydrogen in the near-interface oxide. Moreover, the formation of positive dipole is also observed after high temperature anneal in nitrogen suggesting the contribution of additional mechanisms of dipole formation.

KW - Dipole

KW - Effective work function

KW - Interface barrier

KW - Internal photoemission

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U2 - 10.1016/j.mee.2017.05.051

DO - 10.1016/j.mee.2017.05.051

M3 - 文章

AN - SCOPUS:85020012759

SN - 0167-9317

VL - 178

SP - 304

EP - 307

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Metal- and oxide-related hydrogen-induced dipoles at the Pt/HfO₂ interface

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Keywords

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