Measurement of the Schottky barrier height between Ni-InGaAs alloy and In _0.53Ga _0.47As

TY - JOUR

T1 - Measurement of the Schottky barrier height between Ni-InGaAs alloy and In 0.53Ga 0.47As

AU - Mehari, Shlomo

AU - Gavrilov, Arkady

AU - Cohen, Shimon

AU - Shekhter, Pini

AU - Eizenberg, Moshe

AU - Ritter, Dan

PY - 2012/8/13

Y1 - 2012/8/13

N2 - The temperature dependence of the current-voltage characteristics of Ni-InGaAs alloy Schottky contacts to n-In 0.53Ga 0.47As was measured. Nearly ideal plots with an ideality factor close to unity were obtained. The Arrhenius curve across the wide temperature range of 80-300 K was perfectly linear, yielding a barrier height of 0.239 ± 0.01 eV. This value is substantially larger than previously reported. Conventional metal based Schottky diodes did not exhibit an ideal Schottky behavior. The ideal Schottky diode characteristics are attributed to the lack of oxidation and contamination of the interface between Ni-InGaAs and InGaAs.

AB - The temperature dependence of the current-voltage characteristics of Ni-InGaAs alloy Schottky contacts to n-In 0.53Ga 0.47As was measured. Nearly ideal plots with an ideality factor close to unity were obtained. The Arrhenius curve across the wide temperature range of 80-300 K was perfectly linear, yielding a barrier height of 0.239 ± 0.01 eV. This value is substantially larger than previously reported. Conventional metal based Schottky diodes did not exhibit an ideal Schottky behavior. The ideal Schottky diode characteristics are attributed to the lack of oxidation and contamination of the interface between Ni-InGaAs and InGaAs.

UR - http://www.scopus.com/inward/record.url?scp=84865413030&partnerID=8YFLogxK

U2 - 10.1063/1.4746254

DO - 10.1063/1.4746254

M3 - 文章

AN - SCOPUS:84865413030

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072103

ER -