Kinetics and mechanism of periodic structure formation at SiO2/Mg interface

I. Gutman*, I. Gotman, M. Shapiro

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

The interaction between SiO2 (vitreous/fused silica and quartz) and Mg powder at 450-640 °C was investigated employing a combination of X-ray diffraction and scanning electron microscopy with energy dispersive spectroscopy. The interaction resulted in the formation of a periodic layered structure, consisting of alternating MgO and Mg2Si-rich layers, with typical thickness of 0.5-3 μm. The reaction zone was found to grow by a parabolic law with activation energy of about 76 and 90 kJ/mol for fused silica/Mg and quartz/Mg interactions, respectively. The growth process is controlled by Mg diffusion to SiO2 substrate. A qualitative model describing the formation of such a layered structure in the SiO2/Mg system is presented.

Original languageEnglish
Pages (from-to)4677-4684
Number of pages8
JournalActa Materialia
Volume54
Issue number18
DOIs
StatePublished - Oct 2006
Externally publishedYes

Keywords

  • Activation energy
  • Diffusion couple
  • Magnesium
  • Periodic layer formation
  • Silicon oxide

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