Ion migration and film morphologies in anodic alumina films formed in selenate electrolyte

A. Baron-Wiecheć; O. Ekundayo; S. J. Garcia-Vergara; H. Habazaki; H. Liu; P. Skeldon; G. E. Thompson

doi:10.1149/2.044207jes

Ion migration and film morphologies in anodic alumina films formed in selenate electrolyte

A. Baron-Wiecheć, O. Ekundayo, S. J. Garcia-Vergara, H. Habazaki, H. Liu, P. Skeldon, G. E. Thompson

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Film morphologies and ionic migration are investigated for anodic oxides formed galvanostatically on electropolished aluminum in selenate electrolyte. Anionic selenium species that migrate at ∼0.2 to 0.3 times the rate of O^2- ions were present in barrier films. Further, porous films could be generated by the use of sputtering-deposited aluminum substrates, although the film thickness is limited to ∼70 nm. Re-anodizing in pentaborate electrolyte at high efficiency revealed also a cationic selenium species that migrates at ∼0.6 to 0.7 times the rate of Al³⁺ ions, suggesting that the migration of selenium is affected by the morphology and growth mechanism of the film.

Original language	English
Pages (from-to)	C312-C317
Journal	Journal of the Electrochemical Society
Volume	159
Issue number	7
DOIs	https://doi.org/10.1149/2.044207jes
State	Published - 2012
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/2.044207jes

Cite this

@article{cffd634a9a3641a0bdd14459987130db,

title = "Ion migration and film morphologies in anodic alumina films formed in selenate electrolyte",

abstract = "Film morphologies and ionic migration are investigated for anodic oxides formed galvanostatically on electropolished aluminum in selenate electrolyte. Anionic selenium species that migrate at ∼0.2 to 0.3 times the rate of O2- ions were present in barrier films. Further, porous films could be generated by the use of sputtering-deposited aluminum substrates, although the film thickness is limited to ∼70 nm. Re-anodizing in pentaborate electrolyte at high efficiency revealed also a cationic selenium species that migrates at ∼0.6 to 0.7 times the rate of Al3+ ions, suggesting that the migration of selenium is affected by the morphology and growth mechanism of the film.",

author = "A. Baron-Wieche{\'c} and O. Ekundayo and Garcia-Vergara, {S. J.} and H. Habazaki and H. Liu and P. Skeldon and Thompson, {G. E.}",

year = "2012",

doi = "10.1149/2.044207jes",

language = "英语",

volume = "159",

pages = "C312--C317",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "7",

}

TY - JOUR

T1 - Ion migration and film morphologies in anodic alumina films formed in selenate electrolyte

AU - Baron-Wiecheć, A.

AU - Ekundayo, O.

AU - Garcia-Vergara, S. J.

AU - Habazaki, H.

AU - Liu, H.

AU - Skeldon, P.

AU - Thompson, G. E.

PY - 2012

Y1 - 2012

N2 - Film morphologies and ionic migration are investigated for anodic oxides formed galvanostatically on electropolished aluminum in selenate electrolyte. Anionic selenium species that migrate at ∼0.2 to 0.3 times the rate of O2- ions were present in barrier films. Further, porous films could be generated by the use of sputtering-deposited aluminum substrates, although the film thickness is limited to ∼70 nm. Re-anodizing in pentaborate electrolyte at high efficiency revealed also a cationic selenium species that migrates at ∼0.6 to 0.7 times the rate of Al3+ ions, suggesting that the migration of selenium is affected by the morphology and growth mechanism of the film.

AB - Film morphologies and ionic migration are investigated for anodic oxides formed galvanostatically on electropolished aluminum in selenate electrolyte. Anionic selenium species that migrate at ∼0.2 to 0.3 times the rate of O2- ions were present in barrier films. Further, porous films could be generated by the use of sputtering-deposited aluminum substrates, although the film thickness is limited to ∼70 nm. Re-anodizing in pentaborate electrolyte at high efficiency revealed also a cationic selenium species that migrates at ∼0.6 to 0.7 times the rate of Al3+ ions, suggesting that the migration of selenium is affected by the morphology and growth mechanism of the film.

UR - http://www.scopus.com/inward/record.url?scp=84878217061&partnerID=8YFLogxK

U2 - 10.1149/2.044207jes

DO - 10.1149/2.044207jes

M3 - 文章

AN - SCOPUS:84878217061

SN - 0013-4651

VL - 159

SP - C312-C317

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 7

ER -

Ion migration and film morphologies in anodic alumina films formed in selenate electrolyte

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this