Ion beam mixing of GaAs with films of Al, Si, and their nitrides

R. Fastow; R. Brener; R. Kalish; M. Eizenberg

doi:10.1063/1.340995

Ion beam mixing of GaAs with films of Al, Si, and their nitrides

R. Fastow^*, R. Brener, R. Kalish, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Thin films of Al, AlN, Si, and Si₃N₄ deposited on GaAs substrates were irradiated with silicon ions. The amount of interfacial mixing was found to depend both on the composition of the thin film and on the ion dose. The greatest amount of mixing, as measured by Rutherford backscattering spectrometry and Auger depth profiling, occurred in the Al/GaAs system. Mixing in the Si/GaAs system showed a sublinear dose dependence as well as a deep diffusion of silicon into the substrate. Interfacial phase formation between the aluminum and silicon layers and the GaAs substrate was observed using Auger line shape analysis and low-energy electron loss spectroscopy. Small or negligible mixing was found in the AlN/GaAs and the Si₃N ₄/GaAs systems, presumably due to strong nitrogen bonding in these layers. The data suggest that an optimal cap for through-cap implantation and annealing is a two-layer structure consisting of a thin Si₃N ₄ layer below a thick AlN layer.

Original language	English
Pages (from-to)	2586-2590
Number of pages	5
Journal	Journal of Applied Physics
Volume	63
Issue number	8
DOIs	https://doi.org/10.1063/1.340995
State	Published - 1988
Externally published	Yes

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title = "Ion beam mixing of GaAs with films of Al, Si, and their nitrides",

abstract = "Thin films of Al, AlN, Si, and Si3N4 deposited on GaAs substrates were irradiated with silicon ions. The amount of interfacial mixing was found to depend both on the composition of the thin film and on the ion dose. The greatest amount of mixing, as measured by Rutherford backscattering spectrometry and Auger depth profiling, occurred in the Al/GaAs system. Mixing in the Si/GaAs system showed a sublinear dose dependence as well as a deep diffusion of silicon into the substrate. Interfacial phase formation between the aluminum and silicon layers and the GaAs substrate was observed using Auger line shape analysis and low-energy electron loss spectroscopy. Small or negligible mixing was found in the AlN/GaAs and the Si3N 4/GaAs systems, presumably due to strong nitrogen bonding in these layers. The data suggest that an optimal cap for through-cap implantation and annealing is a two-layer structure consisting of a thin Si3N 4 layer below a thick AlN layer.",

author = "R. Fastow and R. Brener and R. Kalish and M. Eizenberg",

year = "1988",

doi = "10.1063/1.340995",

language = "英语",

volume = "63",

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journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Ion beam mixing of GaAs with films of Al, Si, and their nitrides

AU - Fastow, R.

AU - Brener, R.

AU - Kalish, R.

AU - Eizenberg, M.

PY - 1988

Y1 - 1988

N2 - Thin films of Al, AlN, Si, and Si3N4 deposited on GaAs substrates were irradiated with silicon ions. The amount of interfacial mixing was found to depend both on the composition of the thin film and on the ion dose. The greatest amount of mixing, as measured by Rutherford backscattering spectrometry and Auger depth profiling, occurred in the Al/GaAs system. Mixing in the Si/GaAs system showed a sublinear dose dependence as well as a deep diffusion of silicon into the substrate. Interfacial phase formation between the aluminum and silicon layers and the GaAs substrate was observed using Auger line shape analysis and low-energy electron loss spectroscopy. Small or negligible mixing was found in the AlN/GaAs and the Si3N 4/GaAs systems, presumably due to strong nitrogen bonding in these layers. The data suggest that an optimal cap for through-cap implantation and annealing is a two-layer structure consisting of a thin Si3N 4 layer below a thick AlN layer.

AB - Thin films of Al, AlN, Si, and Si3N4 deposited on GaAs substrates were irradiated with silicon ions. The amount of interfacial mixing was found to depend both on the composition of the thin film and on the ion dose. The greatest amount of mixing, as measured by Rutherford backscattering spectrometry and Auger depth profiling, occurred in the Al/GaAs system. Mixing in the Si/GaAs system showed a sublinear dose dependence as well as a deep diffusion of silicon into the substrate. Interfacial phase formation between the aluminum and silicon layers and the GaAs substrate was observed using Auger line shape analysis and low-energy electron loss spectroscopy. Small or negligible mixing was found in the AlN/GaAs and the Si3N 4/GaAs systems, presumably due to strong nitrogen bonding in these layers. The data suggest that an optimal cap for through-cap implantation and annealing is a two-layer structure consisting of a thin Si3N 4 layer below a thick AlN layer.

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VL - 63

SP - 2586

EP - 2590

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Ion beam mixing of GaAs with films of Al, Si, and their nitrides

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