Ion beam mixing of ai with gaas

R. Fastow, M. Eizenberg, R. Kalish, V. Richter, R. Brener, M. Peisach

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Ion beam mixing of thin aluminum films deposited on GaAs substrates was analyzed using Auger electron spectroscopy and transmission electron microscopy. The formation of an AlAs region ncar the interface was observed after room-temperature implantation. High-temperature implantation (at 400°C) resulted in an AI-GaAs layer, which was identified as Alx Ga1 - x As. The observed reactions resulted from arsenic outdiffusion and subsequent compound formation during implantation.

Original languageEnglish
Pages (from-to)2842-2844
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume5
Issue number5
DOIs
StatePublished - Sep 1987
Externally publishedYes

Fingerprint Dive into the research topics of 'Ion beam mixing of ai with gaas'. Together they form a unique fingerprint.

Cite this