Investigation of the band offsets caused by thin Al 2O 3 layers in HfO 2 based Si metal oxide semiconductor devices

Lior Kornblum*, Boris Meyler, Catherine Cytermann, Svetlana Yofis, Joseph Salzman, Moshe Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Ultrathin dielectric capping layers are a prominent route for threshold voltage control in advanced Si devices. In this work the position of an Al 2O 3 layer inside a HfO 2-based stack is systematically varied and investigated following a low and a high temperature anneal. Electrical results are compared with a sub-nanometer resolution materials characterization, showing a diffusion of Al to the bottom HfO 2 interface. A correlation is found between the presence of Al at the bottom interface and a flatband voltage increase. Based on these findings, we propose to use the position of the Al 2O 3 for fine-tuning the threshold voltage.

Original languageEnglish
Article number062907
JournalApplied Physics Letters
Volume100
Issue number6
DOIs
StatePublished - 6 Feb 2012
Externally publishedYes

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