Investigation of multiphoton photocurrent in SiC using phase-modulated femtosecond laser pulses

Ahsan Ali*, Chuanliang Wang, Jinyang Cai, Khadga Jung Karki

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Wide bandgap semiconductors are widely used in photonic technologies due to their important features, such as large optical windows, fewer energy losses, and fast operational capacity. Next-generation devices require extensive investigation to achieve the desired stability and scalability. Silicon carbide (SiC) is a wide bandgap semiconductor with high optical nonlinearities, large electron transport, and a high breakdown threshold. Integration of SiC in nonlinear photonics requires a systematic analysis of the multiphoton contribution to the device functionality. Here, multiphoton absorption in SiC photodetector is investigated using phase-modulated femtosecond pulses. Quantification of multiphoton absorption is achieved by using a 1030nm phase-modulated pulsed laser. Our measurements show that although the bandgap is less than the energy of three photons combined, four-photon absorption (4PA) contributes to the photocurrent. We interpret 4PA as a phonon-assisted indirect transition from the valance band Γ point to the L point in the conduction band. Moreover, it is found that SiC withstands high excitation intensities, which is suitable for high-power applications.

Original languageEnglish
Title of host publicationQuantum and Nonlinear Optics X
EditorsQiongyi He, Dai-Sik Kim, Chuan-Feng Li
ISBN (Electronic)9781510667990
StatePublished - 2023
EventQuantum and Nonlinear Optics X 2023 - Beijing, China
Duration: 14 Oct 202316 Oct 2023

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceQuantum and Nonlinear Optics X 2023


  • Femtosecond pulsed laser
  • multiphoton absorption
  • nonlinear optics
  • phase modulation


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