TY - JOUR
T1 - Interfacial reactions in the a-Si1-xGex
T2 - H/Cr/quartz system
AU - Edelman, F.
AU - Cytermann, C.
AU - Brener, R.
AU - Eizenberg, M.
AU - Weil, R.
AU - Beyer, W.
N1 - Funding Information:
thick layers with x=0, 0.3, 0.8, and 1.0, were then deposited by CVD glow discharge processing at 200-250°C. We analyzed the a-SiGe:H/Cr/quartz structures using Auger Electron Spectroscopy (AES) and X-ray diffraction (XRD). No interfacial reaction was detected by means of AES in the as-deposited samples. Some oxygen contamination of about 5% was observed by AES near the a-SiGe:H/er interface and inside the as-deposited Cr-layers; the oxygen distribution was not modified by * This research was supported by a grant from the National Council for Research and Developement, Israel and the Forschungszentrum, Jiilich, Germany.
PY - 1993/12/2
Y1 - 1993/12/2
N2 - X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy were used to study the phase formation and kinetics of interfacial reactions in the a-SiSi1-xGex:H/Cr/quartz system after heating to 300-800°C by rapid thermal annealings or vacuum annealings for 10s-12h. We used amorphous Si1-xGex films of various compositions: x = 0, 0.3, 0.8, and 1.0 deposited by glow discharge over Cr-covered fused quartz substrates. No reaction between Cr and SiGe:H in the system was detected up to 400°C. We found that the Ge-rich films were more reactive with the Cr underlayer than the Si-rich films. The main reaction product of the SiGe and Cr interaction was Cr4Ge3.
AB - X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy were used to study the phase formation and kinetics of interfacial reactions in the a-SiSi1-xGex:H/Cr/quartz system after heating to 300-800°C by rapid thermal annealings or vacuum annealings for 10s-12h. We used amorphous Si1-xGex films of various compositions: x = 0, 0.3, 0.8, and 1.0 deposited by glow discharge over Cr-covered fused quartz substrates. No reaction between Cr and SiGe:H in the system was detected up to 400°C. We found that the Ge-rich films were more reactive with the Cr underlayer than the Si-rich films. The main reaction product of the SiGe and Cr interaction was Cr4Ge3.
UR - http://www.scopus.com/inward/record.url?scp=0027906817&partnerID=8YFLogxK
U2 - 10.1016/0022-3093(93)90484-F
DO - 10.1016/0022-3093(93)90484-F
M3 - 文章
AN - SCOPUS:0027906817
SN - 0022-3093
VL - 164-166
SP - 27
EP - 30
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - PART 1
ER -