Interfacial reactions in the a-Si1-xGex: H/Cr/quartz system

F. Edelman*, C. Cytermann, R. Brener, M. Eizenberg, R. Weil, W. Beyer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy were used to study the phase formation and kinetics of interfacial reactions in the a-SiSi1-xGex:H/Cr/quartz system after heating to 300-800°C by rapid thermal annealings or vacuum annealings for 10s-12h. We used amorphous Si1-xGex films of various compositions: x = 0, 0.3, 0.8, and 1.0 deposited by glow discharge over Cr-covered fused quartz substrates. No reaction between Cr and SiGe:H in the system was detected up to 400°C. We found that the Ge-rich films were more reactive with the Cr underlayer than the Si-rich films. The main reaction product of the SiGe and Cr interaction was Cr4Ge3.

Original languageEnglish
Pages (from-to)27-30
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 1
DOIs
StatePublished - 2 Dec 1993
Externally publishedYes

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