Abstract
High-resolution synchrotron radiation photoemission spectroscopy was used to investigate the chemical properties of Al-LiF interfaces. An electronic state appeared at the Al/LiF interface with a binding energy 4.8 eV higher than that of the metallic Al 2p core level, but the state was hardly found to be present at the LiF/Al interface. This indicates that intensive chemical reaction could occur at the Al/LiF interface, while the reaction occurring at the LiF/Al interface would be weak. This result explains well the unsymmetrical electron injection from different sides of the symmetrical device of indium-tin-oxide\Al\ LiF\tris(8-hydroxyquinoline) aluminum\LiF\Al showing unsymmetrical current-voltage characteristics.
Original language | English |
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Article number | 063302 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 6 |
DOIs | |
State | Published - 2009 |
Externally published | Yes |