This work describes the interaction of Pd with MBE grown strained epitxial layers of S1-XGeX Si(100), at low and at high temperatures (250°C and 550°C). Pd was deposited to a thickness of 1700 Ä, on the S1-XGeXSi(100) layers with thicknesses of 3300 A and 2300 A, and with a Ge contents of x=0.09 and 0.18, respectively. Samples were annealed at temperatures ranging from 250 to 550°C. The reaction products were investigated by Transmission Electron Microscopy, Energy Dispersive Spectroscopy, X-ray diffraction and Auger Electron Spectroscopy. Strain in the S1-XGeX layers was measured by Double Crystal X-ray Diffractometry. Diodes were prepared on n-type substrates, and were characterized by current-voltage techniques. The low temperature interaction is characterized by uniform incorporation of Si and Ge in the Pd2S1-yGey compound (textured on the Si] _xGex substrate), and at high temperatures a Ge rich double layer strcucture formed, accompanied by strain relaxation of the S1-XGeX layer. The measured Schottky barrier heights were <£b=0.67 and 0.65 for x=0.09 and x=0.18, respectively.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes|
|State||Published - Dec 1991|
- Compound formation
- Schottky barrier