Interaction of Pd with strained layers of S_1-xGe_x epitaxially grown on si(100)

TY - JOUR

T1 - Interaction of Pd with strained layers of S1-xGex epitaxially grown on si(100)

AU - Buxbaum, A.

AU - Eizenberg, M.

AU - Raizman, A.

AU - Schäffler, F.

PY - 1991/12

Y1 - 1991/12

N2 - This work describes the interaction of Pd with MBE grown strained epitxial layers of S1-XGeX Si(100), at low and at high temperatures (250°C and 550°C). Pd was deposited to a thickness of 1700 Ä, on the S1-XGeXSi(100) layers with thicknesses of 3300 A and 2300 A, and with a Ge contents of x=0.09 and 0.18, respectively. Samples were annealed at temperatures ranging from 250 to 550°C. The reaction products were investigated by Transmission Electron Microscopy, Energy Dispersive Spectroscopy, X-ray diffraction and Auger Electron Spectroscopy. Strain in the S1-XGeX layers was measured by Double Crystal X-ray Diffractometry. Diodes were prepared on n-type substrates, and were characterized by current-voltage techniques. The low temperature interaction is characterized by uniform incorporation of Si and Ge in the Pd2S1-yGey compound (textured on the Si] _xGex substrate), and at high temperatures a Ge rich double layer strcucture formed, accompanied by strain relaxation of the S1-XGeX layer. The measured Schottky barrier heights were <£b=0.67 and 0.65 for x=0.09 and x=0.18, respectively.

AB - This work describes the interaction of Pd with MBE grown strained epitxial layers of S1-XGeX Si(100), at low and at high temperatures (250°C and 550°C). Pd was deposited to a thickness of 1700 Ä, on the S1-XGeXSi(100) layers with thicknesses of 3300 A and 2300 A, and with a Ge contents of x=0.09 and 0.18, respectively. Samples were annealed at temperatures ranging from 250 to 550°C. The reaction products were investigated by Transmission Electron Microscopy, Energy Dispersive Spectroscopy, X-ray diffraction and Auger Electron Spectroscopy. Strain in the S1-XGeX layers was measured by Double Crystal X-ray Diffractometry. Diodes were prepared on n-type substrates, and were characterized by current-voltage techniques. The low temperature interaction is characterized by uniform incorporation of Si and Ge in the Pd2S1-yGey compound (textured on the Si] _xGex substrate), and at high temperatures a Ge rich double layer strcucture formed, accompanied by strain relaxation of the S1-XGeX layer. The measured Schottky barrier heights were <£b=0.67 and 0.65 for x=0.09 and x=0.18, respectively.

KW - Compound formation

KW - Epitaxy

KW - Germanides

KW - Pd

KW - SGe

KW - Schottky barrier

KW - Silicides

UR - http://www.scopus.com/inward/record.url?scp=0042978390&partnerID=8YFLogxK

U2 - 10.1143/JJAP.30.3590

DO - 10.1143/JJAP.30.3590

M3 - 文章

AN - SCOPUS:0042978390

SN - 0021-4922

VL - 30

SP - 3590

EP - 3593

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12

ER -