The interaction of thin Pd films deposited on strained layers of Si1-xGex epitaxially grown on Si(100) was studied. A highly textured, ternary compound (Pd2Si1-yGey) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550°C. Above 550°C, a region of high Ge concentration formed between the fully reacted compound region and the unreacted Si1-xGex layer. Current-voltage investigations showed that Pd on Si1-xGex samples have a lower Schottky barrier height than Pd on pure Si.
|Number of pages||3|
|State||Published - 1991|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 27 Aug 1991 → 29 Aug 1991
|Conference||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||27/08/91 → 29/08/91|