Interaction of Pd with strained layers of Si1-xGex epitaxially grown on Si(100)

A. Buxbaum*, M. Eizenberg, A. Raizman, F. Schaffler

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The interaction of thin Pd films deposited on strained layers of Si1-xGex epitaxially grown on Si(100) was studied. A highly textured, ternary compound (Pd2Si1-yGey) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550°C. Above 550°C, a region of high Ge concentration formed between the fully reacted compound region and the unreacted Si1-xGex layer. Current-voltage investigations showed that Pd on Si1-xGex samples have a lower Schottky barrier height than Pd on pure Si.

Original languageEnglish
Pages144-146
Number of pages3
DOIs
StatePublished - 1991
Externally publishedYes
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 27 Aug 199129 Aug 1991

Conference

Conference23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period27/08/9129/08/91

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