Influences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface

Qi Yuan, Limei Cha*, Wenquan Ming, Xiubo Yang, Shiyong Li, Junfeng Han

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

CuInxGa1-xSe2 (CIGS) films were deposited on soda-lime glass by magnetron sputtering and selenization heat treatments. X-ray diffraction (XRD), high resolution transmission microscopy (HR-TEM), high-angle annular dark field (HAADF) image and X-ray energy dispersive spectrum (EDS) mapping were utilized to analyze the influence of selenization temperature on the characters of CIGS/Mo interface. It was found that CIGS/Mo interface was clear when the selenization temperature was 400℃. A MoSe2 thin layer and Na-riched second phase nanoparticles were detected at CIGS/Mo interface at 500℃. The MoSe2 layer became thicker and the Na-riched nanoparticles grew into a curved band at 600℃, therefore the CIGS/Mo interface developed into a multilayered structure of CIGS/Na-riched second phase/MoSe2/Mo. In addition, the orientations of MoSe2 grains may effect on the formation of second phases.

Translated title of the contributionInfluences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface
Original languageChinese (Simplified)
Pages (from-to)1787-1790 and 1819
JournalCailiao Daobao/Materials Review
Volume32
Issue number6
DOIs
StatePublished - 10 Jun 2018
Externally publishedYes

Fingerprint Dive into the research topics of 'Influences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface'. Together they form a unique fingerprint.

Cite this