Influence of the oxide-semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs

F. Palumbo*, P. Shekhter, M. Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this work, the influence of the oxide-semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O 3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide-semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.

Original languageEnglish
Pages (from-to)56-60
Number of pages5
JournalSolid-State Electronics
Volume93
DOIs
StatePublished - Mar 2014
Externally publishedYes

Keywords

  • InGaAs
  • Interface states
  • Resistive switching

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