Influence of the oxide-semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs

F. Palumbo; P. Shekhter; M. Eizenberg

doi:10.1016/j.sse.2013.12.011

Influence of the oxide-semiconductor interface on the resistive switching phenomenon in metal/Al₂O₃/InGaAs

F. Palumbo^*, P. Shekhter, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this work, the influence of the oxide-semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al₂O ₃/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide-semiconductor interfaces. The influence of the Al₂O₃/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.

Original language	English
Pages (from-to)	56-60
Number of pages	5
Journal	Solid-State Electronics
Volume	93
DOIs	https://doi.org/10.1016/j.sse.2013.12.011
State	Published - Mar 2014
Externally published	Yes

Keywords

InGaAs
Interface states
Resistive switching

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10.1016/j.sse.2013.12.011

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title = "Influence of the oxide-semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs",

abstract = "In this work, the influence of the oxide-semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O 3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide-semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.",

keywords = "InGaAs, Interface states, Resistive switching",

author = "F. Palumbo and P. Shekhter and M. Eizenberg",

note = "Funding Information: One of the authors, Felix Palumbo, is a researcher of CONICET (Argentina) on leave at the Technion. The research leading to these results has received funding from the European Union{\textquoteright}s – Seventh Framework Programme (FP7/2007-2013) under grant agreement n° 299094– MC--CONAT. ",

year = "2014",

month = mar,

doi = "10.1016/j.sse.2013.12.011",

language = "英语",

volume = "93",

pages = "56--60",

journal = "Solid-State Electronics",

issn = "0038-1101",

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T1 - Influence of the oxide-semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs

AU - Palumbo, F.

AU - Shekhter, P.

AU - Eizenberg, M.

N1 - Funding Information: One of the authors, Felix Palumbo, is a researcher of CONICET (Argentina) on leave at the Technion. The research leading to these results has received funding from the European Union’s – Seventh Framework Programme (FP7/2007-2013) under grant agreement n° 299094– MC--CONAT.

PY - 2014/3

Y1 - 2014/3

N2 - In this work, the influence of the oxide-semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O 3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide-semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.

AB - In this work, the influence of the oxide-semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O 3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide-semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.

KW - InGaAs

KW - Interface states

KW - Resistive switching

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U2 - 10.1016/j.sse.2013.12.011

DO - 10.1016/j.sse.2013.12.011

M3 - 文章

AN - SCOPUS:84892971372

SN - 0038-1101

VL - 93

SP - 56

EP - 60

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Influence of the oxide-semiconductor interface on the resistive switching phenomenon in metal/Al₂O₃/InGaAs

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Keywords

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