Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

Felix Palumbo; Salvatore Lombardo; Moshe Eizenberg

doi:10.1016/j.microrel.2015.10.009

Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

Felix Palumbo^*, Salvatore Lombardo, Moshe Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this work, the breakdown transients of metal-oxide-semiconductors (MOS) stacks with InGaAs channels and different oxide layers (Al₂O₃, HfO₂ and Si₃N₄) have been studied in terms of the time-to-breakdown and the duration of the progressive breakdown regime. It is observed that dielectric layers with higher thermal conductivity show larger transient time during the progressive breakdown regime, and this provides a significant lifetime extension across the entire failure distribution. This is attributed to a lower temperature of the percolation path which reduces local electro-migration. Moreover, the overall results show that the progressive breakdown regime is uncorrelated with the initial degradation rate, and that the bending of failure distribution at low percentiles is exclusively attributed to the progressive increase of the gate current during the breakdown event.

Original language	English
Pages (from-to)	22-28
Number of pages	7
Journal	Microelectronics Reliability
Volume	56
DOIs	https://doi.org/10.1016/j.microrel.2015.10.009
State	Published - 1 Jan 2016
Externally published	Yes

Keywords

High-k dielectrics
III-V MOS devices
Oxide breakdown
Progressive breakdown

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10.1016/j.microrel.2015.10.009

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title = "Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks",

abstract = "In this work, the breakdown transients of metal-oxide-semiconductors (MOS) stacks with InGaAs channels and different oxide layers (Al2O3, HfO2 and Si3N4) have been studied in terms of the time-to-breakdown and the duration of the progressive breakdown regime. It is observed that dielectric layers with higher thermal conductivity show larger transient time during the progressive breakdown regime, and this provides a significant lifetime extension across the entire failure distribution. This is attributed to a lower temperature of the percolation path which reduces local electro-migration. Moreover, the overall results show that the progressive breakdown regime is uncorrelated with the initial degradation rate, and that the bending of failure distribution at low percentiles is exclusively attributed to the progressive increase of the gate current during the breakdown event.",

keywords = "High-k dielectrics, III-V MOS devices, Oxide breakdown, Progressive breakdown",

author = "Felix Palumbo and Salvatore Lombardo and Moshe Eizenberg",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd.",

year = "2016",

month = jan,

day = "1",

doi = "10.1016/j.microrel.2015.10.009",

language = "英语",

volume = "56",

pages = "22--28",

journal = "Microelectronics Reliability",

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TY - JOUR

T1 - Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

AU - Palumbo, Felix

AU - Lombardo, Salvatore

AU - Eizenberg, Moshe

PY - 2016/1/1

Y1 - 2016/1/1

N2 - In this work, the breakdown transients of metal-oxide-semiconductors (MOS) stacks with InGaAs channels and different oxide layers (Al2O3, HfO2 and Si3N4) have been studied in terms of the time-to-breakdown and the duration of the progressive breakdown regime. It is observed that dielectric layers with higher thermal conductivity show larger transient time during the progressive breakdown regime, and this provides a significant lifetime extension across the entire failure distribution. This is attributed to a lower temperature of the percolation path which reduces local electro-migration. Moreover, the overall results show that the progressive breakdown regime is uncorrelated with the initial degradation rate, and that the bending of failure distribution at low percentiles is exclusively attributed to the progressive increase of the gate current during the breakdown event.

AB - In this work, the breakdown transients of metal-oxide-semiconductors (MOS) stacks with InGaAs channels and different oxide layers (Al2O3, HfO2 and Si3N4) have been studied in terms of the time-to-breakdown and the duration of the progressive breakdown regime. It is observed that dielectric layers with higher thermal conductivity show larger transient time during the progressive breakdown regime, and this provides a significant lifetime extension across the entire failure distribution. This is attributed to a lower temperature of the percolation path which reduces local electro-migration. Moreover, the overall results show that the progressive breakdown regime is uncorrelated with the initial degradation rate, and that the bending of failure distribution at low percentiles is exclusively attributed to the progressive increase of the gate current during the breakdown event.

KW - High-k dielectrics

KW - III-V MOS devices

KW - Oxide breakdown

KW - Progressive breakdown

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U2 - 10.1016/j.microrel.2015.10.009

DO - 10.1016/j.microrel.2015.10.009

M3 - 文章

AN - SCOPUS:84954074904

SN - 0026-2714

VL - 56

SP - 22

EP - 28

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

Abstract

Keywords

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