Influence of diffusion barriers on the nucleation and growth of CVD Cu for interconnect applications

R. Kröger; M. Eizenberg; D. Cong; N. Yoshida; L. Y. Chen; S. Ramaswami; D. Carl

doi:10.1016/S0167-9317(99)00305-6

Influence of diffusion barriers on the nucleation and growth of CVD Cu for interconnect applications

R. Kröger^*, M. Eizenberg, D. Cong, N. Yoshida, L. Y. Chen, S. Ramaswami, D. Carl

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

Nucleation and growth behavior of Cu influence strongly the macroscopic properties of the resultant films. In this work the nucleation of CVD Cu on different underlayer materials is studied. It is found that nucleation on bare diffusion barrier surfaces leads to island growth and, therefore, bad wetting and adhesion. An enrichment of F, O and carbon was found at the interface between the CVD Cu film and the diffusion barrier. However CVD Cu deposited on top of Ta with a 200-angstroms PVD Cu layer on top results in good wetting. CVD Cu films grown on a PVD Cu layer expose a highly preferred 〈111〉 orientation. In this case SIMS analysis reveals a comparably low concentration of oxygen, carbon and flourine at the interface region between the CVD Cu and the barrier. These observations shed light on relevance of surface conditions for the CVD Cu deposition process. They significantly affect both film adhesion and crystal orientation, which are crucial for the use of CVD Cu as interconnect material.

Original language	English
Pages (from-to)	375-381
Number of pages	7
Journal	Microelectronic Engineering
Volume	50
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(99)00305-6
State	Published - Jan 2000
Externally published	Yes
Event	Proceedings of the 1999 3rd Eropean Workshop on Materials for Advanced Metallization (MAM'99) - Ostende, Belg Duration: 7 Mar 1999 → 10 Mar 1999

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title = "Influence of diffusion barriers on the nucleation and growth of CVD Cu for interconnect applications",

abstract = "Nucleation and growth behavior of Cu influence strongly the macroscopic properties of the resultant films. In this work the nucleation of CVD Cu on different underlayer materials is studied. It is found that nucleation on bare diffusion barrier surfaces leads to island growth and, therefore, bad wetting and adhesion. An enrichment of F, O and carbon was found at the interface between the CVD Cu film and the diffusion barrier. However CVD Cu deposited on top of Ta with a 200-angstroms PVD Cu layer on top results in good wetting. CVD Cu films grown on a PVD Cu layer expose a highly preferred 〈111〉 orientation. In this case SIMS analysis reveals a comparably low concentration of oxygen, carbon and flourine at the interface region between the CVD Cu and the barrier. These observations shed light on relevance of surface conditions for the CVD Cu deposition process. They significantly affect both film adhesion and crystal orientation, which are crucial for the use of CVD Cu as interconnect material.",

author = "R. Kr{\"o}ger and M. Eizenberg and D. Cong and N. Yoshida and Chen, {L. Y.} and S. Ramaswami and D. Carl",

note = "Funding Information: The authors express their thanks to C. Cytermann for performing SIMS measurements and A. Sapir for TEM preparation. R. Kr{\"o}ger acknowledges the support of the Minerva Fellowship Foundation. This work was supported by Applied Materials, Santa Clara, CA.; null ; Conference date: 07-03-1999 Through 10-03-1999",

year = "2000",

month = jan,

doi = "10.1016/S0167-9317(99)00305-6",

language = "英语",

volume = "50",

pages = "375--381",

journal = "Microelectronic Engineering",

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T1 - Influence of diffusion barriers on the nucleation and growth of CVD Cu for interconnect applications

AU - Kröger, R.

AU - Eizenberg, M.

AU - Cong, D.

AU - Yoshida, N.

AU - Chen, L. Y.

AU - Ramaswami, S.

AU - Carl, D.

N1 - Funding Information: The authors express their thanks to C. Cytermann for performing SIMS measurements and A. Sapir for TEM preparation. R. Kröger acknowledges the support of the Minerva Fellowship Foundation. This work was supported by Applied Materials, Santa Clara, CA.

PY - 2000/1

Y1 - 2000/1

N2 - Nucleation and growth behavior of Cu influence strongly the macroscopic properties of the resultant films. In this work the nucleation of CVD Cu on different underlayer materials is studied. It is found that nucleation on bare diffusion barrier surfaces leads to island growth and, therefore, bad wetting and adhesion. An enrichment of F, O and carbon was found at the interface between the CVD Cu film and the diffusion barrier. However CVD Cu deposited on top of Ta with a 200-angstroms PVD Cu layer on top results in good wetting. CVD Cu films grown on a PVD Cu layer expose a highly preferred 〈111〉 orientation. In this case SIMS analysis reveals a comparably low concentration of oxygen, carbon and flourine at the interface region between the CVD Cu and the barrier. These observations shed light on relevance of surface conditions for the CVD Cu deposition process. They significantly affect both film adhesion and crystal orientation, which are crucial for the use of CVD Cu as interconnect material.

AB - Nucleation and growth behavior of Cu influence strongly the macroscopic properties of the resultant films. In this work the nucleation of CVD Cu on different underlayer materials is studied. It is found that nucleation on bare diffusion barrier surfaces leads to island growth and, therefore, bad wetting and adhesion. An enrichment of F, O and carbon was found at the interface between the CVD Cu film and the diffusion barrier. However CVD Cu deposited on top of Ta with a 200-angstroms PVD Cu layer on top results in good wetting. CVD Cu films grown on a PVD Cu layer expose a highly preferred 〈111〉 orientation. In this case SIMS analysis reveals a comparably low concentration of oxygen, carbon and flourine at the interface region between the CVD Cu and the barrier. These observations shed light on relevance of surface conditions for the CVD Cu deposition process. They significantly affect both film adhesion and crystal orientation, which are crucial for the use of CVD Cu as interconnect material.

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M3 - 会议文章

AN - SCOPUS:0343396334

VL - 50

SP - 375

EP - 381

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1-4

Y2 - 7 March 1999 through 10 March 1999

ER -

Influence of diffusion barriers on the nucleation and growth of CVD Cu for interconnect applications

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