Influence of diffusion barriers on the nucleation and growth of CVD Cu for interconnect applications

R. Kröger*, M. Eizenberg, D. Cong, N. Yoshida, L. Y. Chen, S. Ramaswami, D. Carl

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

14 Scopus citations

Abstract

Nucleation and growth behavior of Cu influence strongly the macroscopic properties of the resultant films. In this work the nucleation of CVD Cu on different underlayer materials is studied. It is found that nucleation on bare diffusion barrier surfaces leads to island growth and, therefore, bad wetting and adhesion. An enrichment of F, O and carbon was found at the interface between the CVD Cu film and the diffusion barrier. However CVD Cu deposited on top of Ta with a 200-angstroms PVD Cu layer on top results in good wetting. CVD Cu films grown on a PVD Cu layer expose a highly preferred 〈111〉 orientation. In this case SIMS analysis reveals a comparably low concentration of oxygen, carbon and flourine at the interface region between the CVD Cu and the barrier. These observations shed light on relevance of surface conditions for the CVD Cu deposition process. They significantly affect both film adhesion and crystal orientation, which are crucial for the use of CVD Cu as interconnect material.

Original languageEnglish
Pages (from-to)375-381
Number of pages7
JournalMicroelectronic Engineering
Volume50
Issue number1-4
DOIs
StatePublished - Jan 2000
Externally publishedYes
EventProceedings of the 1999 3rd Eropean Workshop on Materials for Advanced Metallization (MAM'99) - Ostende, Belg
Duration: 7 Mar 199910 Mar 1999

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