Indium out-diffusion in Al2O3/InGaAs stacks during anneal at different ambient conditions

Igor Krylov, Roy Winter, Dan Ritter, Moshe Eizenberg

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Indium out-diffusion during anneal enhances leakage currents in metal/dielectric/InGaAs gate stacks. In this work, we study the influence of ambient conditions during anneal on indium out-diffusion in Al2O 3/InGaAs structures, prior to the gate metal deposition. Using X-ray photoemission spectroscopy and time of flight secondary ions mass spectrometry, we observed much lower indium concentrations in the Al2O3 layer following vacuum and O2 anneals compared to forming gas or nitrogen anneals. The electrical characteristics of the Ni/Al2O 3/InGaAs gate stack following these pre-metallization anneals as well as after subsequent post metallization anneals are presented. Possible explanations for the role of the annealing ambient conditions on indium out-diffusion are presented.

Original languageEnglish
Article number243504
JournalApplied Physics Letters
Volume104
Issue number24
DOIs
StatePublished - 16 Jun 2014
Externally publishedYes

Fingerprint Dive into the research topics of 'Indium out-diffusion in Al<sub>2</sub>O<sub>3</sub>/InGaAs stacks during anneal at different ambient conditions'. Together they form a unique fingerprint.

Cite this