In situ neutron diffraction study of lattice deformation during oxygen precipitation in silicon

K. D. Liss; A. Magerl; J. R. Schneider; W. Zulehner

doi:10.1063/1.350336

In situ neutron diffraction study of lattice deformation during oxygen precipitation in silicon

K. D. Liss^*, A. Magerl, J. R. Schneider, W. Zulehner

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We present the first in situ measurement of the evolution of strain fields due to oxygen precipitation in silicon single crystals by means of high-resolution neutron backscattering. The integrated reflecting power R and the lattice parameter variations Δd/d which are directly related to the strain fields have been measured as a function of temperature and annealing time. In the temperature range from 300 to 1185 K, high purity float zone crystals maintain the R-values characteristic for perfect crystals. In contrast, Czochralski-grown crystals which contain on the order of 10¹ ⁸ oxygen atoms cm^-3 (20 ppm), show a steep increase in reflectivity starting at 1160 K, and which goes through a maximum at 1350 K. At 1456 K, partial annealing occurs with a time constant of several hours.

Original language	English
Pages (from-to)	1276-1280
Number of pages	5
Journal	Journal of Applied Physics
Volume	70
Issue number	3
DOIs	https://doi.org/10.1063/1.350336
State	Published - 1991
Externally published	Yes

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title = "In situ neutron diffraction study of lattice deformation during oxygen precipitation in silicon",

abstract = "We present the first in situ measurement of the evolution of strain fields due to oxygen precipitation in silicon single crystals by means of high-resolution neutron backscattering. The integrated reflecting power R and the lattice parameter variations Δd/d which are directly related to the strain fields have been measured as a function of temperature and annealing time. In the temperature range from 300 to 1185 K, high purity float zone crystals maintain the R-values characteristic for perfect crystals. In contrast, Czochralski-grown crystals which contain on the order of 101 8 oxygen atoms cm-3 (20 ppm), show a steep increase in reflectivity starting at 1160 K, and which goes through a maximum at 1350 K. At 1456 K, partial annealing occurs with a time constant of several hours.",

author = "Liss, {K. D.} and A. Magerl and Schneider, {J. R.} and W. Zulehner",

year = "1991",

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T1 - In situ neutron diffraction study of lattice deformation during oxygen precipitation in silicon

AU - Liss, K. D.

AU - Magerl, A.

AU - Schneider, J. R.

AU - Zulehner, W.

PY - 1991

Y1 - 1991

N2 - We present the first in situ measurement of the evolution of strain fields due to oxygen precipitation in silicon single crystals by means of high-resolution neutron backscattering. The integrated reflecting power R and the lattice parameter variations Δd/d which are directly related to the strain fields have been measured as a function of temperature and annealing time. In the temperature range from 300 to 1185 K, high purity float zone crystals maintain the R-values characteristic for perfect crystals. In contrast, Czochralski-grown crystals which contain on the order of 101 8 oxygen atoms cm-3 (20 ppm), show a steep increase in reflectivity starting at 1160 K, and which goes through a maximum at 1350 K. At 1456 K, partial annealing occurs with a time constant of several hours.

AB - We present the first in situ measurement of the evolution of strain fields due to oxygen precipitation in silicon single crystals by means of high-resolution neutron backscattering. The integrated reflecting power R and the lattice parameter variations Δd/d which are directly related to the strain fields have been measured as a function of temperature and annealing time. In the temperature range from 300 to 1185 K, high purity float zone crystals maintain the R-values characteristic for perfect crystals. In contrast, Czochralski-grown crystals which contain on the order of 101 8 oxygen atoms cm-3 (20 ppm), show a steep increase in reflectivity starting at 1160 K, and which goes through a maximum at 1350 K. At 1456 K, partial annealing occurs with a time constant of several hours.

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DO - 10.1063/1.350336

M3 - 文章

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VL - 70

SP - 1276

EP - 1280

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -

In situ neutron diffraction study of lattice deformation during oxygen precipitation in silicon

Abstract

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