Abstract
We present the first in situ measurement of the evolution of strain fields due to oxygen precipitation in silicon single crystals by means of high-resolution neutron backscattering. The integrated reflecting power R and the lattice parameter variations Δd/d which are directly related to the strain fields have been measured as a function of temperature and annealing time. In the temperature range from 300 to 1185 K, high purity float zone crystals maintain the R-values characteristic for perfect crystals. In contrast, Czochralski-grown crystals which contain on the order of 101 8 oxygen atoms cm-3 (20 ppm), show a steep increase in reflectivity starting at 1160 K, and which goes through a maximum at 1350 K. At 1456 K, partial annealing occurs with a time constant of several hours.
Original language | English |
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Pages (from-to) | 1276-1280 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 70 |
Issue number | 3 |
DOIs | |
State | Published - 1991 |
Externally published | Yes |