In situ neutron diffraction study of lattice deformation during oxygen precipitation in silicon

K. D. Liss*, A. Magerl, J. R. Schneider, W. Zulehner

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We present the first in situ measurement of the evolution of strain fields due to oxygen precipitation in silicon single crystals by means of high-resolution neutron backscattering. The integrated reflecting power R and the lattice parameter variations Δd/d which are directly related to the strain fields have been measured as a function of temperature and annealing time. In the temperature range from 300 to 1185 K, high purity float zone crystals maintain the R-values characteristic for perfect crystals. In contrast, Czochralski-grown crystals which contain on the order of 101 8 oxygen atoms cm-3 (20 ppm), show a steep increase in reflectivity starting at 1160 K, and which goes through a maximum at 1350 K. At 1456 K, partial annealing occurs with a time constant of several hours.

Original languageEnglish
Pages (from-to)1276-1280
Number of pages5
JournalJournal of Applied Physics
Volume70
Issue number3
DOIs
StatePublished - 1991
Externally publishedYes

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