In-situ characterization of interfaces-induced resistivity in nanometric dimensions

Hagay Marom*, Moshe Eizenberg

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

To improve the speed of integrated circuits it is highly important to minimize the electrical resistivity of their interconnects. However, as the dimensions of the interconnects approach the mean free path of the electrons, a substantial rise in resistivity occurs due to additional electron scatterings from grain boundaries and interfaces. To investigate the role of interfaces, in-situ resistivity measurements were preformed for thin copper films on which different materials were deposited. The resistivity was monitored before and after the deposition, enabling to observe the changes as a new top interface was created. Among the materials tested, tantalum resulted in the highest resistivity increase. This fact is of special importance since this material and its nitride serve today as the common diffusion barrier for copper metallization. Titanium resulted in a smaller resistivity increase, but still higher than that of a free copper surface in vacuum. The developed approach enables to test the influence of different diffusion barriers on copper resistivity. With the continuously shrinking dimensions of copper interconnects, this factor will have an increasing importance in future technology nodes.

Original languageEnglish
Pages (from-to)109-114
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume914
StatePublished - 2006
Externally publishedYes
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: 18 Apr 200621 Apr 2006

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