Impact of bilayered oxide stacks on the breakdown transients of metal-oxide-semiconductor devices: An experimental study

S. M. Pazos, S. Boyeras Baldomá, F. L. Aguirre, I. Krylov, M. Eizenberg, F. Palumbo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Physics & Astronomy