High-Quality Al2O3 for low-voltage high-speed high-temperature (Up to 250 °c ) nonvolatile memory technology

Sharon Cui; Cheng Yi Peng; Wenqi Zhang; Xiao Sun; Jie Yang; Zuoguang Liu; Lior Kornblum; Moshe Eizenberg; T. P. Ma

doi:10.1109/LED.2010.2072902

High-Quality Al₂O₃ for low-voltage high-speed high-temperature (Up to 250 °c ) nonvolatile memory technology

Sharon Cui^*, Cheng Yi Peng, Wenqi Zhang, Xiao Sun, Jie Yang, Zuoguang Liu, Lior Kornblum, Moshe Eizenberg, T. P. Ma

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report the properties of a MANAS (Metal/ Al₂O ₃/Nitride/Al₂O₃/Si) charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality Al2O3 deposited by the molecular-atomicdeposition (MAD) technique. Compared with state-of-the-art MANOS (Metal/Al₂O₃/Nitride/ SiO₂/Si) and its derivatives, the MANAS structure features the following: 1) low-voltage/ high-speed operation; 2) fabrication simplicity; and 3) hightemperature retention up to 250°C. These superb features of the MANAS memory cell structure can be attributed to the nearly trap-free nature of the MAD-Al₂O₃, as well as its relatively high conduction band offset and low valence band offset.

Original language	English
Article number	5597916
Pages (from-to)	1443-1445
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	12
DOIs	https://doi.org/10.1109/LED.2010.2072902
State	Published - Dec 2010
Externally published	Yes

Keywords

Aluminum oxide
MANAS
TANOS
charge-trap memory
high-temperature retention
nonvolatile memory
tunnel dielectric

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title = "High-Quality Al2O3 for low-voltage high-speed high-temperature (Up to 250 °c ) nonvolatile memory technology",

abstract = "We report the properties of a MANAS (Metal/ Al2O 3/Nitride/Al2O3/Si) charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality Al2O3 deposited by the molecular-atomicdeposition (MAD) technique. Compared with state-of-the-art MANOS (Metal/Al2O3/Nitride/ SiO2/Si) and its derivatives, the MANAS structure features the following: 1) low-voltage/ high-speed operation; 2) fabrication simplicity; and 3) hightemperature retention up to 250°C. These superb features of the MANAS memory cell structure can be attributed to the nearly trap-free nature of the MAD-Al2O3, as well as its relatively high conduction band offset and low valence band offset.",

keywords = "Aluminum oxide, MANAS, TANOS, charge-trap memory, high-temperature retention, nonvolatile memory, tunnel dielectric",

author = "Sharon Cui and Peng, {Cheng Yi} and Wenqi Zhang and Xiao Sun and Jie Yang and Zuoguang Liu and Lior Kornblum and Moshe Eizenberg and Ma, {T. P.}",

note = "Funding Information: Manuscript received August 13, 2010; revised August 24, 2010; accepted August 26, 2010. Date of publication October 7, 2010; date of current version November 24, 2010. This work was supported in part by the National Science Foundation under Contract MRSEC DMR 0520495 and in part by the Semiconductor Research Corporation. The work of C.-Y. Peng was supported by the National Science Council of Taiwan under Contract NSC-98-2120-M-002-007. The review of this letter was arranged by Editor T. Wang.",

year = "2010",

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doi = "10.1109/LED.2010.2072902",

language = "英语",

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T1 - High-Quality Al2O3 for low-voltage high-speed high-temperature (Up to 250 °c ) nonvolatile memory technology

AU - Cui, Sharon

AU - Peng, Cheng Yi

AU - Zhang, Wenqi

AU - Sun, Xiao

AU - Yang, Jie

AU - Liu, Zuoguang

AU - Kornblum, Lior

AU - Eizenberg, Moshe

AU - Ma, T. P.

N1 - Funding Information: Manuscript received August 13, 2010; revised August 24, 2010; accepted August 26, 2010. Date of publication October 7, 2010; date of current version November 24, 2010. This work was supported in part by the National Science Foundation under Contract MRSEC DMR 0520495 and in part by the Semiconductor Research Corporation. The work of C.-Y. Peng was supported by the National Science Council of Taiwan under Contract NSC-98-2120-M-002-007. The review of this letter was arranged by Editor T. Wang.

PY - 2010/12

Y1 - 2010/12

N2 - We report the properties of a MANAS (Metal/ Al2O 3/Nitride/Al2O3/Si) charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality Al2O3 deposited by the molecular-atomicdeposition (MAD) technique. Compared with state-of-the-art MANOS (Metal/Al2O3/Nitride/ SiO2/Si) and its derivatives, the MANAS structure features the following: 1) low-voltage/ high-speed operation; 2) fabrication simplicity; and 3) hightemperature retention up to 250°C. These superb features of the MANAS memory cell structure can be attributed to the nearly trap-free nature of the MAD-Al2O3, as well as its relatively high conduction band offset and low valence band offset.

AB - We report the properties of a MANAS (Metal/ Al2O 3/Nitride/Al2O3/Si) charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality Al2O3 deposited by the molecular-atomicdeposition (MAD) technique. Compared with state-of-the-art MANOS (Metal/Al2O3/Nitride/ SiO2/Si) and its derivatives, the MANAS structure features the following: 1) low-voltage/ high-speed operation; 2) fabrication simplicity; and 3) hightemperature retention up to 250°C. These superb features of the MANAS memory cell structure can be attributed to the nearly trap-free nature of the MAD-Al2O3, as well as its relatively high conduction band offset and low valence band offset.

KW - Aluminum oxide

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KW - TANOS

KW - charge-trap memory

KW - high-temperature retention

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ER -

High-Quality Al₂O₃ for low-voltage high-speed high-temperature (Up to 250 °c ) nonvolatile memory technology

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Keywords

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