High-Quality Al2O3 for low-voltage high-speed high-temperature (Up to 250 °c ) nonvolatile memory technology

Sharon Cui*, Cheng Yi Peng, Wenqi Zhang, Xiao Sun, Jie Yang, Zuoguang Liu, Lior Kornblum, Moshe Eizenberg, T. P. Ma

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report the properties of a MANAS (Metal/ Al2O 3/Nitride/Al2O3/Si) charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality Al2O3 deposited by the molecular-atomicdeposition (MAD) technique. Compared with state-of-the-art MANOS (Metal/Al2O3/Nitride/ SiO2/Si) and its derivatives, the MANAS structure features the following: 1) low-voltage/ high-speed operation; 2) fabrication simplicity; and 3) hightemperature retention up to 250°C. These superb features of the MANAS memory cell structure can be attributed to the nearly trap-free nature of the MAD-Al2O3, as well as its relatively high conduction band offset and low valence band offset.

Original languageEnglish
Article number5597916
Pages (from-to)1443-1445
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number12
DOIs
StatePublished - Dec 2010
Externally publishedYes

Keywords

  • Aluminum oxide
  • charge-trap memory
  • high-temperature retention
  • MANAS
  • nonvolatile memory
  • TANOS
  • tunnel dielectric

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