HfxAlyO ternary dielectrics for InGaAs based metal-oxide-semiconductor capacitors

Igor Krylov; Dan Ritter; Moshe Eizenberg

doi:10.1063/1.4993905

Hf_xAl_yO ternary dielectrics for InGaAs based metal-oxide-semiconductor capacitors

Igor Krylov^*, Dan Ritter, Moshe Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The electrical properties of Hf_xAl_yO compound dielectric films and the Hf_xAl_yO/InGaAs interface are reported for various dielectric film compositions. Despite the same trimethylaluminum (TMA) pre-deposition treatment, dispersion in accumulation and capacitance-voltage (C-V) hysteresis increased with hafnium content. Different kinds of border traps were identified as being responsible for the phenomena. After anneal, the density of states in the Hf_xAl_yO/InGaAs interface varied quite weakly with dielectric film composition. The optimal composition for obtaining high inversion charge density in metal oxide semiconductor gate stacks is determined by a tradeoff between leakage and dielectric constant, with the optimum atomic cation ratio ([Hf]/[Al]) of ∼1.

Original language	English
Article number	034505
Journal	Journal of Applied Physics
Volume	122
Issue number	3
DOIs	https://doi.org/10.1063/1.4993905
State	Published - 21 Jul 2017
Externally published	Yes

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title = "HfxAlyO ternary dielectrics for InGaAs based metal-oxide-semiconductor capacitors",

abstract = "The electrical properties of HfxAlyO compound dielectric films and the HfxAlyO/InGaAs interface are reported for various dielectric film compositions. Despite the same trimethylaluminum (TMA) pre-deposition treatment, dispersion in accumulation and capacitance-voltage (C-V) hysteresis increased with hafnium content. Different kinds of border traps were identified as being responsible for the phenomena. After anneal, the density of states in the HfxAlyO/InGaAs interface varied quite weakly with dielectric film composition. The optimal composition for obtaining high inversion charge density in metal oxide semiconductor gate stacks is determined by a tradeoff between leakage and dielectric constant, with the optimum atomic cation ratio ([Hf]/[Al]) of ∼1.",

author = "Igor Krylov and Dan Ritter and Moshe Eizenberg",

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AU - Krylov, Igor

AU - Ritter, Dan

AU - Eizenberg, Moshe

PY - 2017/7/21

Y1 - 2017/7/21

N2 - The electrical properties of HfxAlyO compound dielectric films and the HfxAlyO/InGaAs interface are reported for various dielectric film compositions. Despite the same trimethylaluminum (TMA) pre-deposition treatment, dispersion in accumulation and capacitance-voltage (C-V) hysteresis increased with hafnium content. Different kinds of border traps were identified as being responsible for the phenomena. After anneal, the density of states in the HfxAlyO/InGaAs interface varied quite weakly with dielectric film composition. The optimal composition for obtaining high inversion charge density in metal oxide semiconductor gate stacks is determined by a tradeoff between leakage and dielectric constant, with the optimum atomic cation ratio ([Hf]/[Al]) of ∼1.

AB - The electrical properties of HfxAlyO compound dielectric films and the HfxAlyO/InGaAs interface are reported for various dielectric film compositions. Despite the same trimethylaluminum (TMA) pre-deposition treatment, dispersion in accumulation and capacitance-voltage (C-V) hysteresis increased with hafnium content. Different kinds of border traps were identified as being responsible for the phenomena. After anneal, the density of states in the HfxAlyO/InGaAs interface varied quite weakly with dielectric film composition. The optimal composition for obtaining high inversion charge density in metal oxide semiconductor gate stacks is determined by a tradeoff between leakage and dielectric constant, with the optimum atomic cation ratio ([Hf]/[Al]) of ∼1.

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U2 - 10.1063/1.4993905

DO - 10.1063/1.4993905

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SN - 0021-8979

VL - 122

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Hf_xAl_yO ternary dielectrics for InGaAs based metal-oxide-semiconductor capacitors

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